1.

Conference Proceedings
Conference Proceedings
1. Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
R.A. Stein ; B. Thomas ; C. Hecht
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.89-92,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Large Area 4H SiC Products for Power Electronic Devices
I. Manning ; J. Zhang ; B. Thomas ; E. Sanchez ; D. Hansen
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.11-14,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Homoepitaxial Chemical Vapor Deposition of up to 150 µm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor
B. Thomas ; J. Zhang ; G.Y. Chung ; W. Bowen ; V. Torres
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.129-132,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
B. Kallinger ; B. Thomas ; P. Berwian ; J. Friedrich ; G. Trachta
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.55-58,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
B. Kallinger ; B. Thomas ; J. Friedrich
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.143-146,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA
D. Peters ; B. Thomas ; T. Duetemeyer ; T. Hunger ; R. Sommer
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.531-534,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
7.

Conference Proceedings
Conference Proceedings
7. Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR
B. Thomas ; C. Hecht ; B. Kallinger
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.77-80,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. High-Performance Multi-Wafer SiC Epitaxy - First Results of Using a 10×100mm Reactor
C. Hecht ; R.A. Stein ; B. Thomas ; L. Wehrhahn-Kilian ; J. Rosberg
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.89-94,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
B. Thomas ; D.M. Hansen ; J. Zhang ; M.J. Loboda ; J. Uchiyama
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.103-108,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
10.

Conference Proceedings
Conference Proceedings
10. Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
B. Kallinger ; B. Thomas ; S. Polster ; P. Berwian ; J. Friedrich
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.299-302,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648