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Conference Proceedings

1. 3C-SiC Growth on 6H-SiC (0001) Substrates

Matko, I. ; Chenevier, B. ; Audier, M. ; Madar, R. ; Diani, M. ; Simon, L. ; Kubler, L. ; Aubel, D.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.315-318, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. 3C-SiC Growth on 6H-SiC (0001) Substrates

Matko, I. ; Chenevier, B. ; Audier, M. ; Madar, R. ; Diani, M. ; Simon, L. ; Kubler, L. ; Aubel, D.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.315-318, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393