1.

Conference Proceedings
Conference Proceedings
1. Si Acceptors and their Passivation by Hydrogen in p-type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
Ashwin,M.J. ; Addinall,R. ; Fahy,M.R. ; Newman,R.C. ; Silier,I. ; Bauser,E.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.265-270,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy
Wagner,J. ; Ramsteiner,M. ; Ashwin,M.J. ; Fahy,M.R. ; Newman,R.C. ; Braun,W. ; Ploog,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.259-264,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)
Newman,R.C. ; Grosche,E.G. ; Ashwin,M.J. ; Davidson,B.R. ; Robbie,D.A. ; Leigh,R.S. ; Sangster,M.J.L.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.1-10,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Ga vacancies as compensating centers in homogeneously or ｦﾄ-doped GaAs(Si)layers
Laine,T. ; Saarinen,K. ; Hautojarvi,P. ; Corbel,C. ; Pfeiffer,L.N. ; Citrin,P.H. ; Ashwin,M.J. ; Newman,R.C.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.879-884,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Shailow thermal donors in annealed CZ silicon and links to the NL1O EPR spectrum:the reievance of H,Al and N imporities
Newman,R.C. ; Ashwin,M.J. ; Pritcbard,R.E ; Tucker,J.H. ; Lightowlers,E.C. ; Gregorkiewicz,T. ; Zevenbergen,I.S. ; Ammeriaan,C.A.J. ; Falster,R. ; Binns,M.J.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.379-384,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
6.

Conference Proceedings
Conference Proceedings
6. Vibrational absorption from oxygen-hydrogen(Oi-H2)complexes in hydrogeBated CZ silicon
Pritchard,R.E. ; Ashwin,M.J. ; Newman,R.C. ; Tucker,J.H. ; Lightowlers,E.C. ; Binns,M.J. ; Falster,R. ; McQuaid,S.A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.283-288,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
7.

Conference Proceedings
Conference Proceedings
7. Positron Experiments in 5-Doped GaAs(Si)Superlattices:Defect Properties and Positron Diffusion
Laine,T. ; Saarinen,K. ; Hautojarvi,P. ; Corbel,C. ; Ashwin,M.J. ; Newman,R.C.
Pub. info.: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.551-553,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 255-257
8.

Conference Proceedings
Conference Proceedings
8. Si Diffusion out of ｦﾄ-Planes in a GaAs Superlattice
Hart,L. ; Fewster,P.F. ; Ashwin,M.J. ; Fahy,M.R. ; Newman,R.C.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.647-652,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
9.

Conference Proceedings
Conference Proceedings
9. Infrared and Raman Studies of Si ｦﾄ-Doped(100)GaAs Grown by MBE at 400｡？on c(4x4)Surfaces
Newman,R.C. ; Ashwin,M.J. ; Fahy,M.R. ; Hart,L. ; Holmes,S.N. ; Roberts,C. ; Wagner,J.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.425-430,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201