1.

Conference Proceedings
Conference Proceedings
1. Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy
Armitage, Rob ; Horita, Masahiro ; Sudam Jun ; Kimoto, Tsunenobu
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.705-710,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
2.

Conference Proceedings
Conference Proceedings
2. Molecular Beam Epitaxy of GaN on Lattice-matched ZrB2 Substrates Using Low Temperature GaN and AlN Nucleation Layers
Armitage, Rob ; Nishizono, Kazuhiro ; Suda, Jun ; Kimoto, Tsunenobu
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.477-482,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
3.

Conference Proceedings
Conference Proceedings
3. Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN
Yang, Qing ; Feick, Henning ; Armitage, Rob ; Weber, Eicke R.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.725-730,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
4.

Conference Proceedings
Conference Proceedings
4. Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied With Picosecond Time-Resolved Photoluminescence
Yang, Qing ; Armitage, Rob ; Weber, Eicke R. ; Birkhahn, Ronald ; Gotthold, David ; Guo, Shiping ; Albert, Brian
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.649-654,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
5.

Conference Proceedings
Conference Proceedings
5. Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source
Armitage, Rob ; Yang, Qing ; Feick, Henning ; Park, Yeonjoon ; Weber, Eicke R.
Pub. info.: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.11-16,  2002.  Warrendale, Pa.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 719