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15 results

Conference Proceedings

1. Growth of AlN and AlN-SiC Solid Solution by Sublimation Method

Anikin, M. ; Chaussende, D. ; Pernot, E. ; Chaix-Pluchery, O. ; Roussel, H. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1501-1504, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding

Chichignoud, G. ; Auvray, L. ; Blanquet, E. ; Anikin, M. ; Pernot, E. ; Bluet, J.M. ; Chaudouet, P. ; Mermoux, M. ; Moisson, C. ; Letertre, F. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.71-74, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Defect Formation and Macroscopic Modelling of Silicon Carbide Sublimation Process

Pons, M. ; Blanquet, E. ; Bernard, C. ; Dedulle, J.M. ; Anikin, M. ; Chourou, K. ; Madar, R.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.262-269, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

Conference Proceedings

4. Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals

Pernot, E. ; Anikin, M. ; Pons, M. ; Chaix-Pluchery, O. ; Baillet, F. ; Matko, I. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.143-146, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Seed Surface Preparation for SiC Sublimation Growth

Pelissier, B. ; Moulin, C. ; Pernot, E. ; Anikin, M. ; Grosse, P. ; Faure, C. ; Ferrand, B. ; Couchaud, M. ; Basset, G. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.47-50, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

6. Progress in SiC Bulk Growth

Anikin, M. ; Chaix, O. ; Pernot, E. ; Pelissier, B. ; Pons, M. ; Pisch, A. ; Bernard, C. ; Grosse, P. ; Faure, C. ; Grange, Y. ; Basset, G. ; Moulin, C. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.13-16, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

7. Numerical Simulation of SiC Boule Growth by Sublimation

Madar, R. ; Pons, M. ; Dedulle, J. -M. ; Blanquet, E. ; Pisch, A. ; Grosse, P. ; Faure, C. ; Anikin, M. ; Bernard, C.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.25-30, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. Evaporation Behavior of SiC Powder for Single Crystal Growth - An Experimental Study on Thermodynamics and Kinetics

Pisch, A. ; Ferraria, A. M. ; Chatillon, C. ; Blanquet, E. ; Pons, M. ; Bemard, C. ; Anikin, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.91-94, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals

Pernot, E. ; Anikin, M. ; Pons, M. ; Chaix-Pluchery, O. ; Baillet, F. ; Matko, I. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.143-146, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Wettability Study of SiC in Correlation with XPS Analysis

Stambouli, V. ; Chaussende, D. ; Anikin, M. ; Berthome, G. ; Thoreau, V. ; Joud, J.C.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.423-426, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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Author: Anikin, M.