1.

Conference Proceedings
Conference Proceedings
1. Spin Resonance investigations of GaN and AlGaN
Reinacher, N. M. ; Angerer, H. ; Ambacher, O. ; Brandt, M. S. ; Stutzmann, M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.579-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. Elemental Analysis on Group-III Nitrides Using Heavy Ion ERD
Dollinger, G. ; Karsch, S. ; Ambacher, O. ; Angerer, H. ; Bergmaier, A. ; Schmelmer, O. ; Stutzmann, M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.745-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Conference Proceedings
Conference Proceedings
3. Characterization of AlxGa1-xN Films Prepared by Plasma-Induced Molecular-Beam Epitaxy on c-Plane Sapphire
Angerer, H. ; Ambacher, O. ; Stutzmann, M. ; Metzger, T. ; Hopler, R. ; Born, E. ; Bergmaier, A. ; Dollinger, G.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.305-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
4.

Conference Proceedings
Conference Proceedings
4. Improved Aluminum Nitride Thin Films Grown by MOCVD From Tritertiarybutylaluminum and Ammonia
Metzger, T. ; Born, E. ; Stommer, R. ; Rieger, W. ; Dimitrov, R. ; Lentz, D. ; Angerer, H. ; Ambacher, O. ; Stutzmann, M.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.323-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
5.

Conference Proceedings
Conference Proceedings
5. Laser Processing for Patterned and Freestanding Nitride Films
Kelly, M. K. ; Ambacher, O. ; Dimitrov, R. ; Angerer, H. ; Handschuh, R. ; Stutzmann, M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.973-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Defect Transitions in GaN Between 3.0 and 3.4 eV
Rieger, W. ; Ambacher, O. ; Rohrer, E. ; Angerer, H. ; Stutzmann, M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.671-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449