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Conference Proceedings

1. Bias-temperature-stress induced mobility improvement in 4H-SiC MOSFETs

Chatty, K. ; Chow, T. P. ; Gutmann, R. J. ; Arnold, E. ; Alok, D.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.63-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

2. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1041-1044, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

Alok, D. ; Arnold, E. ; Egloff, R.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1077-1080, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

4. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1041-1044, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393