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33 results

Conference Proceedings

1. Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

R. Green ; A.J. Lelis ; D.B. Habersat

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.461-464, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation - A First Principles Study

D.P. Ettisserry ; N. Goldsman ; A. Akturk ; A.J. Lelis

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.465-468, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

3. Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

D.B. Habersat ; N. Goldsman ; A.J. Lelis

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.697-700, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Comparison Test Methods for Proper Characterization of V_T in SiC MOSFETs

D.B. Habersat ; A.J. Lelis ; R. Green ; M. El

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.833-839, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

5. Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

C.J. Cochrane ; P.M. Lenahan ; A.J. Lelis

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.299-302, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

6. Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

A.J. Lelis ; D.B. Habersat ; R. Green ; N. Goldsman

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.465-468, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

7. Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

C.J. Cochrane ; P.M. Lenahan ; A.J. Lelis

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.433-436, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

8. Silicon Carbide-Silicon Dioxide Transition Layer Mobility

S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.449-452, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

9. Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation

S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.457-460, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

10.

Conference Proceedings

10. Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices

D.B. Habersat ; A.J. Lelis ; R. Green

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.461-464, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

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Author: A.J. Lelis