1.

Conference Proceedings
Conference Proceedings
1. Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-κ Gate Stacks
A. Toriumi ; T. Nabatame ; H. Ota
Pub. info.: Atomic layer deposition applications 4.  pp.69-75,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(4)
2.

Conference Proceedings
Conference Proceedings
2. Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks
K. Kita ; C. Lee ; T. Nishimura ; K. Nagashio ; A. Toriumi
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.187-194,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
3.

Conference Proceedings
Conference Proceedings
3. Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors
T. Tabata ; C. Lee ; K. Kita ; A. Toriumi
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.479-486,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
4.

Conference Proceedings
Conference Proceedings
4. Roles of Predominant and Subordinate Carriers in Breakdown Mechanism of High-k Gate Dielectrics Studied with HfAlOx/SiO₂ Stacks
K. Okada ; H. Ota ; A. Ogawa ; W. Mizubayashi ; T. Horikawa ; H. Satake ; T. Nabatame ; A. Toriumi
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.179-190,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)
5.

Conference Proceedings
Conference Proceedings
5. Current Status and Perspective of High-k Gate Stack Materials Engineering for Further Scaled CMOS
A. Toriumi
Pub. info.: ULSI process integration 5.  pp.3-16,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(6)
6.

Conference Proceedings
Conference Proceedings
6. Doped HfO₂ fur Higher-k Dielectrics
A. Toriumi ; K. Kita ; K. Tomida ; Y. Yamamoto
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.185-200,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
7.

Conference Proceedings
Conference Proceedings
7. Accurate TDDB Lifetime Prediction of High-k Stacked Gate Dielectrics with Regarding High Density Initial Traps
K. Okada ; H. Ota ; T. Nabatame ; A. Toriumi
Pub. info.: Silicon nitride, silicon dioxide, and emerging dielectrics 9.  pp.671-686,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(3)
8.

Conference Proceedings
Conference Proceedings
8. Impact of Dielectric Material Selection on Electrical Characteristics of High-k/Ge Devices
K. Kita ; H. Nomura ; T. Nishimura ; A. Toriumi
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.71-80,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
9.

Conference Proceedings
Conference Proceedings
9. Thermodynamics and Kinetics for Suppression of GeO Desorption by High Pressure Oxidation of Ge
Kosuke Nagashio ; C. H. Lee ; T. Nishimura ; K. Kita ; A. Toriumi
Pub. info.: CMOS gate-stack scaling--materials, interfaces and reliability implications : symposium held April 14-16, 2009, San Francisco, California, U.S.A..  pp.157-162,  2009.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1155
10.

Conference Proceedings
Conference Proceedings
10. Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as High k Gate Dielectric
Y. Zhao ; K. Kita ; K. Kyuno ; A. Toriumi
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.141-148,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)