1.

Conference Proceedings
Conference Proceedings
1. Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage
N. Kawabata ; A. Tanaka ; M. Tsujimura ; Y. Ueji ; K. Omote
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.384-388,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
T. Miyazawa ; K. Nakayama ; A. Tanaka ; K. Asano ; S.Y. Ji
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.851-854,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
A. Tanaka ; N. Kawabata ; M. Tsujimura ; Y. Furukawa ; T. Hoshino
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.315-318,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
K. Asano ; K. Nakayama ; Y. Miyanagi ; A. Tanaka ; M. Nishimura
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.718-721,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
K. Nakayama ; A. Tanaka ; K. Asano ; T. Miyazawa ; M. Ito
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.989-992,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
K. Asano ; A. Tanaka ; S. Ogata ; K. Nakayama ; Y. Miyanagi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.965-968,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Development of the new shape PZT ceramics sounder suitable for a sound source of artificial larynx
Progress in biomedical optics and imaging. vol.7, no.39
Pub. info.: Biomedical applications of micro- and nanoengineering III : 11-13 December 2006, Adelaide, Australia.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6416
8.

Conference Proceedings
Conference Proceedings
8. Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
K. Nakayama ; A. Tanaka ; K. Asano ; T. Miyazawa ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.903-906,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
9.

Conference Proceedings
Conference Proceedings
9. High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
K. Nakayama ; S. Ogata ; T. Hayashi ; T. Hemmi ; A. Tanaka
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.841-844,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
10.

Conference Proceedings
Conference Proceedings
10. Crustal Deformation of Long Valley Caldera, Eastern California, Inferred from L-Band InSAR
A. Tanaka
Pub. info.: Proceedings of the ALOS PI 2008 Symposium, 3-7 November 2008, Island of Rhodes, Greece.  2009.  Noordwijk, The Netherlands.  ESA Communication Production Office
Title of ser.: ESA SP
Ser. no.: 664