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17 results

Conference Proceedings

1. Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction

P.M. Gammon ; A. Pérez-Tomás ; M.R. Jennings ; A.M. Sanchez ; C. Fisher

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.1006-1009, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Innovative 3C-SiC on SiC via Direct Wafer Bonding

M.R. Jennings ; A. Pérez-Tomás ; A. Severino ; P. Ward ; A. Bashir

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.271-274, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

3. Characterisation of HfO₂/Si/SiC MOS Capacitors

P.M. Gammon ; A. Pérez-Tomás ; M.R. Jennings ; O.J. Guy ; N. Rimmer

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.674-677, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

4. Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T

A. Pérez-Tomás ; A. Fontserè ; M. Placidi ; N. Baron ; S. Chenot

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.816-819, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

5. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

C. Raynaud ; D.M. Nguyen ; P. Brosselard ; A. Pérez-Tomás ; D. Planson

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.671-674, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

6. Physical Modelling of 4H-SiC PiN Diodes

C.A. Fisher ; M.R. Jennings ; A.T. Bryant ; A. Pérez-Tomás ; P.M. Gammon

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.993-996, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

7. Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

O.J. Guy ; A. Pérez-Tomás ; M.R. Jennings ; M. Lodzinski ; A. Castaing

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.443-448, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

8. Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3CSiC(100)/Si

F. Li ; Y.K. Sharma ; M.R. Jennings ; A. Pérez-Tomás ; V.A. Shah

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.667-670, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

9. On the Ti₃SiC₂ Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts

M.R. Jennings ; C.A. Fisher ; D. Walker ; A. Sanchez ; A. Pérez-Tomás

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.693-696, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

10.

Conference Proceedings

10. 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

A. Pérez-Tomás ; M. Placidi ; N. Baron ; S. Chenot ; Y. Cordier

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.1207-1210, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

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