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11 results

Conference Proceedings

1. Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

G. Alfieri ; A. Mihaila ; H.M. Ayedh ; B.G. Svensson ; P. Hazdra

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.308-311, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Optimization of 1700V 4H-SiC JBS Diode Parameters

R.K. Sharma ; P. Hazdra ; S. Popelka ; A. Mihaila ; H. Bartolf

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.782-785, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

3. Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs

A. Mihaila ; F. Udrea ; S.J. Rashid ; G. Amaratunga ; M. Kataoka ; Y. Takeuchi ; R.K. Malhan

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.925-928, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

4. Analysis of Novel Packaging Techniques for High Power Electronics in SiC

S.J. Rashid ; C.M. Johnson ; F. Udrea ; A. Mihaila ; G. Amaratunga ; R.K. Malhan

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.971-974, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

5. Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation

P. Hazdra ; V. Zahlava ; J. Vobecky ; M. Berthou ; A. Mihaila

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.661-664, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

6. Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

H. Bartolf ; V. Sundaramoorthy ; A. Mihaila ; M. Berthou ; P. Godignon

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.795-799, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

7. Comparison of 5kV SiC JBS and PiN Diodes

M. Berthou ; P. Godignon ; J. Calvo ; A. Mihaila ; E. Bianda

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.867-870, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. Point Defects Investigation of High Energy Proton Irradiated SiC p⁺-i-n Diodes

G. Alfieri ; A. Mihaila ; R. Nipoti ; M. Puzzanghera ; G. Sozzi ; P. Godignon ; J. Millán

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.246-249, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

Conference Proceedings

9. On the Influence of Active Area Design on the Performance of SiC JBS Diodes

A. Mihaila ; R.A. Minamisawa ; L. Knoll ; V.K. Sundaramoorthy ; E. Bianda ; H. Bartolf ; G. Alfieri ; M. Rahimo

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.471-476, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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Conference Proceedings

10. Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes

V. Soler ; M. Cabello ; M. Berthou ; J. Montserrat ; J. Rebollo ; P. Godignon ; E. Bianda ; A. Mihaila

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.537-540, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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Author: A. Mihaila