1.

Conference Proceedings
Conference Proceedings
1. Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
M. Florentin ; M. Alexandru ; A. Constant ; P. Michel ; J. Montserrat
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.667-672,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication
A. Constant ; N. Camara ; J. Montserrat ; E. Pausas ; J. Camassel
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.500-503,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
M. Florentin ; M. Alexandru ; A. Constant ; B. Schmidt ; P. Godignon
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.121-126,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806
4.

Conference Proceedings
Conference Proceedings
4. Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
M. Florentin ; M. Alexandru ; A. Constant ; B. Schmidt ; J. Millán
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.525-528,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
5.

Conference Proceedings
Conference Proceedings
5. Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
M.J. Tadjer ; A. Constant ; P. Godignon ; S. Martin-Horcajo ; A. Bosca
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.553-556,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
A. Constant ; N. Camara ; P. Godignon ; M. Berthou ; J. Camassel
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.817-820,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648