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11 results

Conference Proceedings

1. Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation - A First Principles Study

D.P. Ettisserry ; N. Goldsman ; A. Akturk ; A.J. Lelis

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.465-468, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Silicon Carbide-Silicon Dioxide Transition Layer Mobility

S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.449-452, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

3. Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation

S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.457-460, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

4. Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

A. Akturk ; B. Cusack ; N. Goldsman

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.1023-1027, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

5. SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

A. Akturk ; N. Goldsman ; A. Ahyi ; S. Dhar ; B. Cusack

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.1070-1073, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

6. Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments

A. Akturk ; M. Dandin ; A.V. Vert ; S.I. Soloviev ; P. Sandvik

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1199-1202, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

7. Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs

S. Potbhare ; N. Goldsman ; A. Akturk ; A.J. Lelis ; R. Green

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.805-808, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

8. Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter

S. Potbhare ; N. Goldsman ; A. Akturk ; A.J. Lelis

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.1163-1166, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

9. Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs

S. Potbhare ; A. Akturk ; N. Goldsman ; A.J. Lelis ; S. Dhar

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.975-978, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

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Technical Paper

10. PIV Measurements and Computational Study of a 5-Inch Ducted Fan for V/STOL UAV Applications

C. Camci ; A. Akturk ; A. Shavalikul

Pub. info.:	AIAA meeting papers on disc. 2009. Reston, Va.. American Institute of Aeronautics and Astronautics
Title of ser.:	AIAA Paper : Aerospace Sciences Meeting and Exhibit
Ser. no.:	2009

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Author: A. Akturk