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Conference Proceedings

1. Role of Bulk HfO2 and Interfacial SiO2 Layer in Breakdown Characteristics of TiN/HfO2/SiO2/Si Gate Stacks

N. Rahim ; N. Chowdhury ; D. Misra

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.629-638, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

2. Modeling and Simulation of Drain Current 1/f Noise in High-κ Based n-MOSFETs

P. Srinivasan ; D. Misra

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.645-655, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

3. Electrical Characterization of Metal Gate/High-κ Dielectrics on GaAs Substrate

V. Budhraja ; D. Misra

Pub. info.:	Physics and technology of high-k gate dielectrics 6. pp.455-461, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(5)

Conference Proceedings

4. Breakdown Characteristics of High-k Gate Dielectrics with Metal Gates

D. Misra ; N. Chowdhury ; G. Bersuker ; C. Young ; R. Choi

Pub. info.:	ULSI process integration 5. pp.143-160, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(6)

Conference Proceedings

5. Evidence of Deep Energy States from Low Temperature Measurements and Its Role in Charge Trapping in Metal Gate/Hf-Silicate Gate Stacks

N. A. Chowdhury ; P. Srinivasan ; D. Misra

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.767-776, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

6. Effect of Nitridatien on 1/f Noise in n-MOSFETs with High-k Dielectric

P. Srinivasan ; E. Simoen ; L. Pantisano ; C. L. Claeys ; D. Misra ; C. Rittersma

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.681-692, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

7. Annealing Effect on Reliability of Si0₂ for Deuterium-Implanted Silicon

T. Kundu ; D. Misra

Pub. info.:	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. pp.221-232, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(1)

Conference Proceedings

8. Field Dependent Carrier Transport Mechanisms in Metal-insulator-metal Devices with Ba_0.8Sr_0.2TiO₃/ZrO₂ Heterostructured Thin Films as the Dielectric

Santosh K. Sahoo ; H. Bakhru ; Sumit Kumar ; D. Misra ; Colin A. Wolden

Pub. info.:	Solution synthesis of inorganic functional materials - films, nanoparticles and nanocomposites : symposium held April 1-5, 2013, San Francisco, California U.S.A.. pp.53-60, 2013. Warrendale, Pa. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1547

Conference Proceedings

9. Relaxor Behavior in Ba_0.8Sr_0.2TiO₃/ZrO₂ Heterostructured Thin Films

Santosh K. Sahoo ; H. Bakhru ; Sumit Kumar ; D. Misra ; Y.N. Mohapatra ; D.C. Agrawal

Pub. info.:	Nanocomposites, nanostructures and heterostructures of correlated oxide systems : symposium held April 9-13, 2012, San Francisco, California, U.S.A.. pp.89-96, 2012. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1454

10.

Conference Proceedings

10. Breakdown Characteristics of High-k Gate Dielectrics with Metal Gates

N. Rahim ; D. Misra

Pub. info.:	Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing. pp.91-97, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	13(2)

11.

Conference Proceedings

11. NBTI Effects in pMOSFETS with TiN/Hf-Silicate Based Gate Stacks

N. A. Chowdhury ; D. Misra

Pub. info.:	Physics and technology of high-k gate dielectrics 4. pp.215-224, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(3)

12.

Conference Proceedings

12. Charge Trapping in High-k Gate Dielectrics: A Recent Understanding

D. Misra ; N. Chowdhury

Pub. info.:	Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing. pp.311-328, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	2(1)

13.

Conference Proceedings

13. High-k Gate Stack Engineering and Low Frequency Noise Performance

C. Claeys ; E. Simoen ; P. Srinivasan ; D. Misra

Pub. info.:	Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing. pp.287-300, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	2(1)

14.

Conference Proceedings

14. Effect of Nitridation on Ge/HfO₂ Interface

R. Garg ; D. Misra ; S. Guha

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.17-26, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

15.

Conference Proceedings

15. Dielectric Properties of BST/(Y₂O₃)x(ZrO₂)₁₋x/BST Trilayer Films

Santosh K. Sahoo ; D. Misra

Pub. info.:	Oxide nanoelectronics : symposium held November 29-December 3, Boston, Massachusetts, U.S.A.. pp.9-14, 2011. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1292

16.

Conference Proceedings

16. 1/f Noise as a Tool to Assess Fermi Level Pinning (EF) at the HfO₂/poly-Si Interface in High-k n-MOSFETs

P. Srinivasan ; E. Simoen ; L. Pantisano ; C. Claeys ; D. Misra

Pub. info.:	Silicon materials science and technology X. pp.503-514, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	2(2)

17.

Conference Proceedings

17. Si-SiO₂ Interface Behavior in n-MOSFETs with Reverse Biased Voltage During High Field and Hot Electron Injection

P. Srinivasan ; B. Vootukuru ; D. Misra

Pub. info.:	Interfaces in electronic materials : proceedings of the international symposium. pp.305-315, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-31

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