1.

Conference Proceedings
Conference Proceedings
1. QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
Lucovsky, G. ; Ma, Y. ; He, S.S. ; Yasuda, T. ; Stephens, D.J. ; Habermehl, S.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
2.

Conference Proceedings
Conference Proceedings
2. ELECTRICAL PROPERTIES OF OXIDE-NITRIDE-OXIDE, ONO, HETEROSTRUCTURES FABRICATED BY LOW TEMPERATURE REMOTE PECVD
Ma, Y. ; Yasuda, T. ; Chen, Y.L. ; Lucovsky, G. ; Maher, D.M.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.147-152,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
3.

Conference Proceedings
Conference Proceedings
3. CHEMICALLY MODIFIED SECOND HARMONIC GENERATION AT SURFACES ON VICINAL Si(111) WAFERS
Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H. ; Bjorkman, C.H. ; Shearon, Jr., C.E. ; Ma, Y. ; Yasuda, T. ; Lucovsky, G.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.815-820,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
4.

Conference Proceedings
Conference Proceedings
4. A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111)
Yasuda, T. ; Lee, D. R. ; Bjorkman, C. H. ; Ma, Y. ; Lucovsky, G. ; Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H.
Pub. info.: Surface chemical cleaning and passivation for semiconductor processing.  pp.375-,  1993.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 315
5.

Conference Proceedings
Conference Proceedings
5. Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and rapid thermal processing
Ma, Y. ; Yasuda, T. ; Lucovsky, G.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.569-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300