1.

Conference Proceedings
Conference Proceedings
1. The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Lambers, E. ; Pearton, S.J.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.238-244,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
2.

Conference Proceedings
Conference Proceedings
2. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems
Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.201-212,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
3.

Conference Proceedings
Conference Proceedings
3. Evaluation of Erbium Doped III-Nitride Semiconductors for Optoelectronic Applications
Hoemmerich, U. ; Thaik, M. ; Zavada, J.M. ; Schwartz, R.N. ; Wilson, R.G. ; Pearton, S.J. ; Abernathy, C.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.110-118,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
4.

Conference Proceedings
Conference Proceedings
4. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
5.

Conference Proceedings
Conference Proceedings
5. High temperature Stable W and WSi contacts on n- and p-GaN
Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Zeitouny, A. ; Eisenber, M. ; Zopler, J.C. ; Abernathy, C.R. ; Han, J. ; Shul, R.J. ; Lothian, J.R.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.208-214,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
6.

Conference Proceedings
Conference Proceedings
6. Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
Ren, F. ; LaRoche, J. ; Anderson, T. ; Pearton, S.J. ; Lee, J.W. ; Johnson, D. ; Lothian, J.R. ; Lin, J. ; Weiner, J.S. ; Shul, R.J. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.513-519,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2