1.

Conference Proceedings
Conference Proceedings
1. REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES
Pearton, S.J. ; Chakrabarti, U.K. ; Baiocchi, F.A. ; Hobson, W.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.417-424,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
2.

Conference Proceedings
Conference Proceedings
2. ION IMPLANT ACTIVATION AND REDISTRIBUTION IN AlXGa1-XAs
Pearton, S.J. ; Hobson, W.S. ; Von Neida, A.E. ; Haegel, N.M. ; Jones, K.S. ; Morris, N. ; Sealy, B.J.
Pub. info.: Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.665-670,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 157
3.

Conference Proceedings
Conference Proceedings
3. CHARACTERIZATION OF MODULATION DOPED PSEUDOMORPHIC A1GaAs/InGaAs/GaAs HEMT STRUCTURES BY ELECTRON BEAM ELECTROEREFLECTANCE AND PHOTOLUMINESCENCE
Herman, M.H. ; Ward, I.D. ; Kopf, R.F. ; Pearton, S.J. ; Jones, E.D.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.661-666,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
4.

Conference Proceedings
Conference Proceedings
4. Sn-H COMPLEX IN HYDROGEN PASSIVATED GaAs
Kozuch, D.M. ; Stavola, Michael J. ; Pearton, S.J. ; Abernathy, C.R. ; Lopata, J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.477-482,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
5.

Conference Proceedings
Conference Proceedings
5. SURFACE PROTECTION DURING PLASMA HYDROGENATION FOR ACCEPTOR PASSIVATION IN InPD
Lopata, J. ; Dautremont-Smith, W.C. ; Pearton, S.J. ; Lee, J.W. ; Ha, N.T. ; Luftman, H.S.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.501-510,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
6.

Conference Proceedings
Conference Proceedings
6. HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP
Swaminathan, V. ; Chakrabarti, U.K. ; Hobson, W.S. ; Caruso, R. ; Lopata, J. ; Pearton, S.J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.489-494,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
7.

Conference Proceedings
Conference Proceedings
7. ACCEPTOR DELTA-DOPING IN GaAs
Hobson, W.S. ; Pearton, S.J. ; Abernathy, C.R. ; Cabaniss, G.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.855-860,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
8.

Conference Proceedings
Conference Proceedings
8. ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2
Pearton, S.J. ; Hobson, W.S. ; Jones, K.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.425-430,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
9.

Conference Proceedings
Conference Proceedings
9. *FERMI RESONANCE EFFECTS ON THE VIBRATION MODES OF HYDROGEN-PASSIVATED BORON IN SILICON
Watkins, G.D. ; Fowler, W.B. ; Deleo, G.G. ; Stavola, M. ; Kozuch, D.M. ; Pearton, S.J. ; Lopata, J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.367-376,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163