1.

Conference Proceedings
Conference Proceedings
1. STRUCTURE AND MORPHOLOGY OF 'D-DEFECTS' IN CZ Si
Park, J-G. ; Kirk, H. ; Cho, K-C. ; Lee, H-K. ; Lee, C-S. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.370-378,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
2.

Conference Proceedings
Conference Proceedings
2. LOW TEMPERATURE IMPURITY GETTERING FOR GIGA-SCALE INTEGRATED CIRCUIT TECHNOLOGY
Rozgonyi, G.A. ; Koveshnikov, S. ; Agarwal, A.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.868-883,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
3.

Conference Proceedings
Conference Proceedings
3. SURFACE RECOMBINATION VELOCITY AND RECOMBINATION LIFETIME IN IRON CONTAMINATED SILICON
Buczkowski, A. ; Shimura, F. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.495-504,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
4.

Conference Proceedings
Conference Proceedings
4. Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates
Park, J.G. ; Ushio, S. ; Takeno, H. ; Cho, K.-C. ; Kim, J.-K. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.53-64,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-33
5.

Conference Proceedings
Conference Proceedings
5. Electric Field Effect on Iron-Boron Pair/Interstitial Iron Dissociation/Re-Assodation
Kikuchi, H. ; Agarwai, A. ; Koveshnikov, S. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.298-304,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
6.

Conference Proceedings
Conference Proceedings
6. Temperature Dependent Electron Beam Induced Current Studies of MOS Capacitor Structures
Kirk, H.R. ; Park, J.G. ; Lee, D.M. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.275-285,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
7.

Conference Proceedings
Conference Proceedings
7. Correlat ion of Substrate D-Defects in CZ Silicon with MOS Breakdown
Park, J-G. ; Kirk, H. ; Lee, C-S. ; Lee, H-K. ; Lee, D-M. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.57-71,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
8.

Conference Proceedings
Conference Proceedings
8. EBIC and SEM Studies of Enhanced DIffusion of Arsenic along Misfit Dislocations in Epltaxial Si/Si(Ge)
Braga, N. ; Buczkowski, A. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.157-166,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
9.

Conference Proceedings
Conference Proceedings
9. Metastability of Electronic Properties of Interfacial Defects in Si/Si(Ge) Heterostructures
Koveshnikov, S.V. ; Agarwai, A. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.167-175,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
10.

Conference Proceedings
Conference Proceedings
10. Non-Contact Full Wafer Evaluation of Deep Levels in Silicon Via Temperature Dependent Surface Recombination Velocity, and Carrier Lifetime
Buczkowski, A. ; Rozgonyi, G.A. ; Shimura, F.
Pub. info.: Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing II.  pp.1-14,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-3