1.

Conference Proceedings
Conference Proceedings
1. Si Acceptors and their Passivation by Hydrogen in p-type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
Ashwin,M.J. ; Addinall,R. ; Fahy,M.R. ; Newman,R.C. ; Silier,I. ; Bauser,E.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.265-270,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
Davidson,B.R. ; Newman,R.C. ; Pritchard,R.E. ; Robbie,D.A. ; Sangster,M.J.L. ; Wagner,J. ; Fischer,A. ; Ploog,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.247-252,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy
Wagner,J. ; Ramsteiner,M. ; Ashwin,M.J. ; Fahy,M.R. ; Newman,R.C. ; Braun,W. ; Ploog,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.259-264,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers
Newman,R.C. ; Davidson,B.R. ; Addinall,R. ; Murray,R. ; Emmert,J.W. ; Wagner,J. ; Gotz,W. ; Roos,G. ; Pensl,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.229-234,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
5.

Conference Proceedings
Conference Proceedings
5. Hydrogen Solubility and Defects in Silicon
Binns,M.J. ; Newman,R.C. ; McQuaid,S.A. ; Lightowlers,E.C.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.861-866,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
McQuaid,S.A. ; Londos,C.A. ; Binns,M.J. ; Newman,R.C. ; Tucker,J.H.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.963-968,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
7.

Conference Proceedings
Conference Proceedings
7. A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
Pajot,B. ; McQuaid,S. ; Newman,R.C. ; Song,C. ; Rahbi,R.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.969-973,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
8.

Conference Proceedings
Conference Proceedings
8. On the Pairing between Indium and Carbon Atoms in Silicon
Ott,U. ; Wolf,H. ; Krings,Th. ; Wichert,Th. ; Haｦﾂlein,H. ; Sielemann,R. ; Deicher,M. ; Newman,R.C. ; Zulehner,W.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.1251-1256,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
9.

Conference Proceedings
Conference Proceedings
9. Si Diffusion out of ｦﾄ-Planes in a GaAs Superlattice
Hart,L. ; Fewster,P.F. ; Ashwin,M.J. ; Fahy,M.R. ; Newman,R.C.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.647-652,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147