1.

Conference Proceedings
Conference Proceedings
1. MBE Growth of GaN on NdGaO3(101)
Fechtmann, C. ; Kirchner, V. ; Einfeldt, S. ; Heinke, H. ; Hommel, D. ; Lukasiewicz, T. ; Luczynski, Z. ; Baranowski, J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.295-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy
KrTschil, A. ; Witte, H. ; Lisker, M. ; Christen, J. ; Birkle, U. ; Einfeldt, S. ; Hommel, D. ; Topf, M. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.887-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482