1.

Conference Proceedings
Conference Proceedings
1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.451-458,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. ANISOTROPIC REACTIVE ION ETCHING OF SUBMICRON W FEATURES IN CF4 OR SF6 PLASMAS
Fullowan, T. R. ; Ren, F. ; Pearton, S. J. ; Mahoney, G. E. ; Kostelak, R. L.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.315-322,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Fullowan, T. R. ; Pearton, S. J. ; Kopf, R. F. ; Ren, F. ; Chen, Y. K. ; Smith, P. R. ; Chin, C. A. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.285-292,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
4.

Conference Proceedings
Conference Proceedings
4. ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES
Pearton, S. J. ; Ren, F. ; Lothian, J. R. ; Fullowan, T. R. ; Kopf, R. F. ; Chakrabati, U. K. ; Hui, S. P. ; Emerson, A. B. ; Pei, S. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.293-300,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
5.

Conference Proceedings
Conference Proceedings
5. WET AND DRY ETCHING OF InGaP
Lothian, J. R. ; Kuo, J. M. ; Pearton, S. J. ; Ren, F.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.307-314,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
6.

Conference Proceedings
Conference Proceedings
6. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING
Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.417-424,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
7.

Conference Proceedings
Conference Proceedings
7. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.409-416,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
8.

Conference Proceedings
Conference Proceedings
8. ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl
Pearton, S. J. ; Kuo, J. M. ; Hobson, W. S. ; Hailemarian, E. ; Ren, F. ; Katz, A. ; Perley, A. P.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.797-804,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
9.

Conference Proceedings
Conference Proceedings
9. RADIATION TESTING OF AlInAs/InGaAs AND GaAs/AlGaAs HBTs
Witmer, S. B. ; Mittleman, S. ; Lehy, D. ; Ren, F. ; Fullowan, T. R. ; Kopf, R. F. ; Abernathy, C. R. ; Pearton, S. J. ; Humphrey, D. A. ; Monthgomery, R. K. ; Smith, P. R. ; Kreskovsky, J. P. ; Grubin, H. L.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.523-530,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
10.

Conference Proceedings
Conference Proceedings
10. THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE
Abernathy, C.R. ; Song, J. ; Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Bohling, D.A. ; Muhr, G.T.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.183-194,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
11.

Conference Proceedings
Conference Proceedings
11. *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES
Pearton, S. J. ; Katz, A. ; Feingold A ; Ren, F. ; Fullowan, T. R. ; Lothian, J. R ; Abernathy, C. R.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.19-30,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
12.

Conference Proceedings
Conference Proceedings
12. High-Density Plasma Etching of Group-III Nitride Films for Device Application
Shul, R. ; Zhang, L ; Baca, A. ; Han, J. ; Crawford, M. ; Willison, C. ; Pearton, S. ; Ren, F. ; Zolper, J. ; Lester, L.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.25-39,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
13.

Conference Proceedings
Conference Proceedings
13. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
14.

Conference Proceedings
Conference Proceedings
14. Reduction of Surface State Density in H2S Plasma-Treated GaAs
Shen, H. ; Zhou, W. ; Pamulapati, J. ; Ren, F.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.220-226,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
15.

Conference Proceedings
Conference Proceedings
15. The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Lambers, E. ; Pearton, S.J.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.238-244,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
16.

Conference Proceedings
Conference Proceedings
16. Non-Alloyed Ohmic Contacts on n-Type InP with Nitridation of Patterned InP Surface
Ren, F. ; Pearton, S. J. ; Lothian, J.R. ; Chu, S.N.G. ; Chu, W.K. ; Wilson, R.G. ; Abernathy, C.R. ; Pei, S.
Pub. info.: Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX).  pp.304-310,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-18
17.

Conference Proceedings
Conference Proceedings
17. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems
Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.201-212,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
18.

Conference Proceedings
Conference Proceedings
18. Hydrogen Incorporation into III-V Nitrides During Processing
Pearton, S.J. ; Shul, R.J. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M. ; Abernathy, C.R. ; Vartuli, C.B. ; Lee, J.W. ; Mileham, J.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.178-186,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
19.

Conference Proceedings
Conference Proceedings
19. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
20.

Conference Proceedings
Conference Proceedings
20. Fabrication and Performance of Sub-Micron T-Gate High-Speed High-Electron Mobility Transistors
Weiner, J.S. ; Kuo, J.M. ; Lothian, J.R. ; Wang, Y.C. ; Ren, F. ; Tsai, H.S. ; Sivco, D. ; Cho, A.Y. ; Chen, Y.K.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.288-292,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
21.

Conference Proceedings
Conference Proceedings
21. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
22.

Conference Proceedings
Conference Proceedings
22. High temperature Stable W and WSi contacts on n- and p-GaN
Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Zeitouny, A. ; Eisenber, M. ; Zopler, J.C. ; Abernathy, C.R. ; Han, J. ; Shul, R.J. ; Lothian, J.R.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.208-214,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
23.

Conference Proceedings
Conference Proceedings
23. Fabrication of Reliable InGaAs/InP DHBT Structures for High Speed Circuit Applications
Kopf, R.F. ; Hamm, R.A. ; Ryan, R.W. ; Tate, A. ; Chen, Y.K. ; Georgiou, G. ; Ren, F. ; Lang, D.V.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.534-547,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
24.

Conference Proceedings
Conference Proceedings
24. Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
Ren, F. ; LaRoche, J. ; Anderson, T. ; Pearton, S.J. ; Lee, J.W. ; Johnson, D. ; Lothian, J.R. ; Lin, J. ; Weiner, J.S. ; Shul, R.J. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.513-519,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
25.

Conference Proceedings
Conference Proceedings
25. Novel Optical and E-Beam Lithographic Techniques for Semiconductor Processing
Lothian, J.R. ; Ren, F. ; Weiner, J.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.573-586,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
26.

Conference Proceedings
Conference Proceedings
26. Plasma Etching of NiFeCo, NiMnSb and CoFeB-Based Multilayers
Jung, K.B. ; Cho, H. ; Feng, T. ; Park, Y.D. ; Pearton, S.I. ; Caballero, J.A. ; Childress, J.R. ; Ren, F.
Pub. info.: Proceedings of the Fifth International Sympposium on Magnetic Materials, Processes, and Devices : applications to storage and microelectromechanical systems (MEMS).  pp.105-114,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-20
27.

Conference Proceedings
Conference Proceedings
27. COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE
Wisk, P. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Fullowan, T. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.63-68,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
28.

Conference Proceedings
Conference Proceedings
28. GROWTH OF GaAs AND AlGaAs BY MOMBE USING PHENYLARSINE
Abernathy, C. R. ; Wisk, P. ; Pearton, S. J. ; Ren, F. ; Bohling, D. A. ; Muhr, G. T.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.57-62,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
29.

Conference Proceedings
Conference Proceedings
29. HIGHLY RELIABLE WGe OHMIC CONTACT TO GaAs-AlGaAs HBTs
Fullowan, T.R. ; Ren, F. ; Tseng, B. ; Pearton, S.J. ; Abernathy, C.R. ; Harriott, L.R. ; Lane, E.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.239-246,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
30.

Conference Proceedings
Conference Proceedings
30. TRI-LAYER LIFT-OFF METALLIZATION PROCESS USING LOW TEMPERATURE DEPOSITED SiNx
Lothian, J.R. ; Ren, F. ; Pearton, S.J. ; Chakrabarti, U.K. ; Abernathy, C.R. ; Katz, A.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.259-266,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
31.

Conference Proceedings
Conference Proceedings
31. GROWTH OF GaN, AIN AND InN BY ELECTRON CYCLOTRON RESONANCE-METAL ORGANIC MOLECULAR BEAM EPITAXY
Wisk, P.W. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Lothian, J.R. ; Katz, A. ; Jones, K.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.599-604,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
32.

Conference Proceedings
Conference Proceedings
32. InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE
Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Wisk, P.W. ; Esagui, R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
33.

Conference Proceedings
Conference Proceedings
33. USE OF SELECTIVE AREA DEFECT CREATION FOR ISOLATION OF III-V MULTILAYER STRUCTURES
Pearton, S. J. ; Ren, F. ; Fullowan, T. R, ; Katz, A. ; Hobson, W. S. ; Abernaty, C. R. ; Lothian, J., R. ; D'Asaro, L. A. ; Elliman, R. G. ; Ridgway, M. C. ; Jagadish, C. ; Williams,. J. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.763-768,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
34.

Conference Proceedings
Conference Proceedings
34. COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs
Ren, F. ; Fullowan, T. R. ; Lochian, J. R. ; Wisk, P.W. ; Abernathy, C. R. ; Kopf, R.F ; Emerson, A. B. ; Downey, S. W. ; Pearton, S. J.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.797-802,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
35.

Conference Proceedings
Conference Proceedings
35. REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2
Ren, F. ; Pearton, S.J. ; Lothian, J.R. ; Abernathy, C.R. ; Hobson, W.S.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.529-536,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
36.

Conference Proceedings
Conference Proceedings
36. DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs
Pearton, S.J. ; Ren, F. ; Katz, A. ; Chakrabarti, U.K. ; Lane, E. ; Hobson, W.S. ; Kopf, R.F. ; Abernathy, C.R. ; Wu, C.S. ; Bohling, D.A. ; Ivankovits, J.C.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.131-138,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
37.

Conference Proceedings
Conference Proceedings
37. IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS
Pearton, S.J. ; Chakrabarti, U.K. ; Katz, A. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Fullowan, T.R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.123-130,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
38.

Conference Proceedings
Conference Proceedings
38. HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS
Pearton, S. J. ; Chakrabarti, U. K. ; Katz, A. ; Ren, F. ; Fullowan, T. R. ; Abernathy, C R. ; Hobson, W. S.
Pub. info.: Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A..  pp.17-22,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 268
39.

Conference Proceedings
Conference Proceedings
39. The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides
Vartuli, C.B. ; Pearton, S.J. ; Abernathy, C.R. ; Shul, R.J. ; Ren, F.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.39-56,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
40.

Conference Proceedings
Conference Proceedings
40. A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN
Cole, M.W. ; Eckart, D.W. ; Han, W.Y ; Pfeffer, R.L. ; Monahan, T. ; Ren, F. ; Yuan, C. ; Stall, R.A. ; Pearton, S.J. ; Li, Y. ; Lu, Y.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.187-197,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
41.

Conference Proceedings
Conference Proceedings
41. The Surface Composition of S-Passivated InGaAs(001)
Barynski, R.A. ; Geelhaar, L. ; Ren, F. ; Buckley, D.N.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.337-345,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
42.

Conference Proceedings
Conference Proceedings
42. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
43.

Conference Proceedings
Conference Proceedings
43. Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source
Cole, M.W. ; Han, W.Y. ; Pfeffer, R.L. ; Eckart, D.W. ; Pang, S.W. ; Ko, K.K. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Caballero, J.A. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.293-306,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
44.

Conference Proceedings
Conference Proceedings
44. Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma
Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Cole, M.W. ; Caballero, J.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.346-353,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
45.

Conference Proceedings
Conference Proceedings
45. Device Processing of Wide Bandgap Semiconductors - Challenges and Directions
Pearton, S.J. ; Ren, F. ; Shul, R.J. ; Zolper, J.C.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.138-161,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
46.

Conference Proceedings
Conference Proceedings
46. Demonstration of Enhancement-Mode p-Channel GaAs MOSFETs with Ga2O3 (Ga2O3) passivation
Ren, F. ; Hong, M.W. ; Hobson, W.S. ; Kuo, J.M. ; Lothian, J.R. ; Mannaerts, J.P. ; Kwo, J. ; Chu, S.N.G. ; Chen, Y.K. ; Cho, A.Y.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.84-90,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
47.

Conference Proceedings
Conference Proceedings
47. Ga2O3(Gd2O3) as a Gate Dielectric for GaAs MOSFETs
Hong, M. ; Kwo, J. ; Liu, C.T. ; Marcus, M.A. ; Lay, T.S. ; Ren, F. ; Mannaerts, J.P. ; Ng, K.K. ; Chen, Y.K. ; Chou, L.J. ; Hsieh, K.C. ; Cheng, K.Y.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.434-442,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
48.

Conference Proceedings
Conference Proceedings
48. Power PHEMT for Low Voltage Applications
Tsai, H.S. ; Kuo, J.M. ; Wang, Y.C. ; Chen, Y.K. ; Ren, F. ; Lothian, J.R.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.63-70,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
49.

Conference Proceedings
Conference Proceedings
49. In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Ren, F. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Emerson, A. B. ; Yanof, A. W. ; Schleich, D. M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.481-486,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
50.

Conference Proceedings
Conference Proceedings
50. ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs
Pearton, S. J. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Chu, S. N. G. ; Kovalchick, J.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.491-496,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181