1.

Conference Proceedings
Conference Proceedings
1. QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
Lucovsky, G. ; Ma, Y. ; He, S.S. ; Yasuda, T. ; Stephens, D.J. ; Habermehl, S.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
2.

Conference Proceedings
Conference Proceedings
2. ELECTRICAL PROPERTIES OF OXIDE-NITRIDE-OXIDE, ONO, HETEROSTRUCTURES FABRICATED BY LOW TEMPERATURE REMOTE PECVD
Ma, Y. ; Yasuda, T. ; Chen, Y.L. ; Lucovsky, G. ; Maher, D.M.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.147-152,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
3.

Conference Proceedings
Conference Proceedings
3. HIGH CHANNEL MOBILITY a-Si:H THIN FILM TRANSISTORS WITH OXIDE-NITRIDE DIELECTRICS
He, S.S. ; Stephens, D.J. ; Lucovsky, G. ; Hamaker, R.W.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.413-418,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
4.

Conference Proceedings
Conference Proceedings
4. HYDROGENATED AMORPHOUS SILICON-NITROGEN, a-Si,N:H ALLOYS: AN ALTERNATIVE TO a-Si,C:H FOR THE WIDE BAND GAP PHOTO-ACTIVE MATERIAL IN TANDEM PV CELLS
Williams, M.J. ; Cho, S.M. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.759-766,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
5.

Conference Proceedings
Conference Proceedings
5. a-Si:H THIN FILM TRANSISTORS AND LOGIC CIRCUITS FABRICATED IN AN INTEGRATED MULTICHAMBER SYSTEM
Kim, S. S. ; Wang, C. ; Parsons, G. N. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A..  pp.373-378,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 192
6.

Conference Proceedings
Conference Proceedings
6. STUDIES OF SiH2Cl2/H2 GAS PHASE CHEMISTRY FOR SELECTIVE THIN FILM GROWTH OF CRYSTALLINE SILICON, c-Si, USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Theil, J.A. ; Lucovsky, G. ; Hattangady, S.V. ; Fountain, G.G. ; Markunas, R.J.
Pub. info.: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.601-612,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 220
7.

Conference Proceedings
Conference Proceedings
7. ELECTRON MICROSCOPY STUDIES OF UNDOPED AND PHOSPHORUS DOPED Si:H AND Si,C:H FILMS
Chen, Y.L. ; Bentley, J. ; Wang, C. ; Lucovsky, G. ; Maher, D.M.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.711-716,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
8.

Conference Proceedings
Conference Proceedings
8. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Photons and low energy particles in surface processing : symposium held Decmber[i.e. December] 3-6, 1991, Boston, Massachusetts, U.S.A..  pp.341-348,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 236
9.

Conference Proceedings
Conference Proceedings
9. DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)
Wang, C: ; Bjorkman, C.H. ; Lee, D.R. ; Williams, M.J. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.277-282,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
10.

Conference Proceedings
Conference Proceedings
10. DEPOSITION OF GaN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (Remote PECVD)
Choi, S.W. ; Bachmann, K.J. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.195-200,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
11.

Conference Proceedings
Conference Proceedings
11. A SPECTROSCOPIC INVESTIGATION OF THE AMORPHOUS TO MICROCRYSTALLINE TRANSITION IN SILICON PREPARED BY REACTIVE MAGNETRON SPUTTERING
Turner, W.A. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.521-526,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
12.

Conference Proceedings
Conference Proceedings
12. INTEGRATED PREDEPOSITION CLEANING/PASSIVATION OF Si SURFACES FOR MOS DEVICES WITH Si02/Si INTERFACES
Hattangady, S. ; Misra, V. ; Yasuda, T. ; Xu, X.L. ; Hornung, B. ; Lucovsky, G. ; Wortman, J.J.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.288-295,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
13.

Conference Proceedings
Conference Proceedings
13. THE INTERACTION OF HYDROGEN PLASMAS WITH Ga-BASED Ill-V SEMICONDUCTOR SURFACES
Lu, Z. ; Habermehl, S. ; Lucovsky, G. ; Dietz, N. ; Bachmann, K.J. ; Osgood, R.M.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.416-424,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
14.

Conference Proceedings
Conference Proceedings
14. Preparation of Ultrathin Oxide Films by Low-Temperature Remote Plasma-Assisted Process
Niimi, H. ; Koh, K. ; Lucovsky, G.
Pub. info.: Proceedings of the eleventh International Symposium on Plasma Processing.  pp.623-630,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-12
15.

Conference Proceedings
Conference Proceedings
15. Controlled Nitrogen Incorporation at Si-SiO2 Interfaces by Re- mote Plasma Assisted Processing
Koh, K. ; Niimi, H. ; Lucovsky, G.
Pub. info.: Proceedings of the eleventh International Symposium on Plasma Processing.  pp.631-638,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-12
16.

Conference Proceedings
Conference Proceedings
16. IMPROVED ELECTRICAL PERFORMANCE OF a-Si:H THIN FILM TRANSISTORS, TFTs WITH n+ μc-Si CONTACT, AND SILICON OXIDE AND NITRIDE DUAL-LAYER DIELECTRICS
He, S.S. ; Stephens, D.J. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.871-876,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
17.

Conference Proceedings
Conference Proceedings
17. Si3N4/SiO2 MULTI-LAYER REFLECTING STACKS FOR PHOTONIC SWITCHING APPLICATIONS
Stephens, D.J. ; He, S.S. ; Lucovsky, G. ; Mikkelsen, H. ; Leo, K. ; Kurz, H.
Pub. info.: Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A..  pp.223-228,  1993.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 298
18.

Conference Proceedings
Conference Proceedings
18. FORMATION OF MULTILAYER SiO2-SiOx HETEROSTRUCTURES BY CONTROL OF REACTION PATHWAYS IN REMOTE PECVD
Tsu, D.V. ; Kim, S.S. ; Theil, J.A. ; Wang, Cheng ; Lucovsky, G.
Pub. info.: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.209-214,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 165
19.

Conference Proceedings
Conference Proceedings
19. CONTRIBUTIONS TO SILICON-HYDROGEN BOND-STRETCHING FREQUENCY IN AMORPHOUS Si ALLOYS
Jing, Z. ; Whitten, J.L. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1992.  pp.287-292,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
20.

Conference Proceedings
Conference Proceedings
20. DEFECT STATES AND STRUCTURAL DISORDER IN a-Si
Davidson, B. N. ; Lucovsky, G. ; Bernholc, J.
Pub. info.: Amorphous silicon technology, 1992.  pp.263-268,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
21.

Conference Proceedings
Conference Proceedings
21. RAMAN SCATTERING FROM MICROCRYSTALLINE FILMS: CONSIDERATIONS OF COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL ABSORPTION PROPERTIES
Nemanich, R.J. ; Buehler, E.C. ; LeGrice, Y.M. ; Shroder, R.E. ; Parsons, G.N. ; Wang, C. ; Lucovsky, G. ; Boyce, J.B.
Pub. info.: Materials issues in microcrystalline semiconductors : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.265-270,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 164
22.

Conference Proceedings
Conference Proceedings
22. DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE Si,C ALLOY THIN FILMS BY A REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS
Wang, C. ; Lucovsky, G. ; Nemanich, R.J.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.751-756,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
23.

Conference Proceedings
Conference Proceedings
23. STRAIN DEPENDENT DIFFUSION IN THE DRY THERMAL OXIDATION PROCESS OF CRYSTALLINE Si
Bjorkman, C. H. ; Lucovsky, G.
Pub. info.: Thin films : stresses and mechanical properties III : symposium held December 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.81-86,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 239
24.

Conference Proceedings
Conference Proceedings
24. CHEMICALLY MODIFIED SECOND HARMONIC GENERATION AT SURFACES ON VICINAL Si(111) WAFERS
Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H. ; Bjorkman, C.H. ; Shearon, Jr., C.E. ; Ma, Y. ; Yasuda, T. ; Lucovsky, G.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.815-820,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
25.

Conference Proceedings
Conference Proceedings
25. THE OPTICAL PROPERTIES OF PLASMA-DEPOSITED SiO2 AND Si3N4 BRAGG REFLECTORS IN THE SPECTRAL RANGE FROM 1.8 TO 3.0 eV
Stephens, D.J. ; He, S.S. ; Lucovsky, G. ; Mikkelsen, H. ; Leo, K. ; Kurz, H.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.809-814,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
26.

Conference Proceedings
Conference Proceedings
26. Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF Si
Yasuda, T. ; Ma, Y. ; Habermehl, S. ; Kim, S.S. ; Lucovsky, G. ; Schneider, T.P. ; Cho, J. ; Nemanich R.J.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
27.

Conference Proceedings
Conference Proceedings
27. COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE TO ATOMIC H PRIOR TO OXIDATION AND DEPOSITION
Yasuda, T. ; Ma, Y. ; Habermechl, S. ; Lucovsky, G.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.473-480,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
28.

Conference Proceedings
Conference Proceedings
28. BARRIER LIMITED TRANSPORT MECHANISMS IN DOPED μc-Si AND μc-Si, C
Lucovsky, G. ; Wang, C.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.377-382,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
29.

Conference Proceedings
Conference Proceedings
29. STUDIES OF MOS HETEROJUNCTION DEVICES USING DOPED μc-Si AND a-Si
Lee, D.R. ; Bjorkman, C.H. ; Wang, C. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
30.

Conference Proceedings
Conference Proceedings
30. DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD
Williams, M.J. ; Wang, C. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.388-394,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
31.

Conference Proceedings
Conference Proceedings
31. *TRANSPORT AND MICROSTRUCTURE OF MICROCRYSTALLINE SILICON ALLOYS
Lucovsky, G. ; Wang, C. ; Williams, M.J. ; Chen, Y.L. ; Maher, D.M.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.443-454,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
32.

Conference Proceedings
Conference Proceedings
32. PHOTOLUMINESCENCE IN B-DOPED μc-Si:H
Gu, S.Q. ; Viner, J.M. ; Taylor, P.C. ; Williams, M.J. ; Turner, W.A. ; Lucovsky, G.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.579-584,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
33.

Conference Proceedings
Conference Proceedings
33. ELECTRICAL PROPERTIES OF BORON-DOPED μc-Si:H PREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si TARGETS
Turner, W.A. ; Williams, M.J. ; Chen, Y.L. ; Maher, D.M. ; Lucovsky, G.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.567-572,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
34.

Conference Proceedings
Conference Proceedings
34. CONTROL OF PROCESS-INDUCED DEFECTS IN THE FORMATION OF SINGLE AND MULTIPLE LAYER DIELECTRIC STRUCTURES FOR Si SEMICONDUCTOR DEVICES
He, S. S. ; Stephens, D. J. ; Ma. Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.653-658,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
35.

Conference Proceedings
Conference Proceedings
35. POLYHYRIDE BONDING GROUPS IN PECVD AMORPHOUS Si THIN FILMS
Davidson, B.N. ; Parsons, G.N. ; Wang, C. ; Lucovsky, G.
Pub. info.: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.173-180,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 165
36.

Conference Proceedings
Conference Proceedings
36. LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS
Yasuda, T. ; ma, Y. ; Lucovsky, G.
Pub. info.: Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.713-720,  1992.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 238
37.

Conference Proceedings
Conference Proceedings
37. WORK FUNCTION DIFFERENCE BETWEEN N-TYPE μc-Si GATE ELECTRODES DEPOSITED BY REMOTE PECVD AND P-TYPE c-Si SUBSTRATES IN MOS CAPACITORS
Lee, D.R. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1992.  pp.979-984,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
38.

Conference Proceedings
Conference Proceedings
38. ELECTRONIC STATES IN THE GAP OF a-Si FROM BOND ANGLE VARIATIONS
Davidson, B. N. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A..  pp.279-284,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 192
39.

Conference Proceedings
Conference Proceedings
39. FORMATION OF MICROCRYSTALLINE SILICON FILM BY RMS PROCES
Wang, Cheng ; Parsons, G.N. ; Buehler, E.C. ; Memanich, R.J. ; Lucovsky, G.
Pub. info.: Materials issues in microcrystalline semiconductors : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.21-26,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 164
40.

Conference Proceedings
Conference Proceedings
40. A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES OF INTERFACIAL TRAPS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; He, S.S. ; Stephens, D.J. ; Lucovsky, G.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
41.

Conference Proceedings
Conference Proceedings
41. SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)
Lamb, H.H. ; Kalem, S. ; Bedge, S. ; Yasuda, T. ; Ma, Y. ; Lucovsky, G.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.75-80,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
42.

Conference Proceedings
Conference Proceedings
42. CHANNEL LAYER SURFACE MODIFICATIONS IN a-Si:H THIN FILM TRANSISTORS WITH OXIDE/NITRIDE DIELECTRIC LAYERS
He, S.S. ; Stephens, D.J. ; Hamaker, R.W. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.505-510,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
43.

Conference Proceedings
Conference Proceedings
43. INTEGRATED, DUAL-FUNCTION REMOTE PLASMA-ENHANCED PROCESSING APPLIED TO LOW DAMAGE SiO2 ETCHING AND REMOVAL OF C-F POLYMER RESIDUES
Yasuda, T. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.523-528,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
44.

Conference Proceedings
Conference Proceedings
44. NITROGEN INCORPORATION IN a-Si, N:H ALLOY FILMS PRODUCED BY REMOVE PECVD
Parsons, G.N. ; Lucovsky, G.
Pub. info.: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.85-90,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 165
45.

Conference Proceedings
Conference Proceedings
45. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.799-806,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
46.

Conference Proceedings
Conference Proceedings
46. ENERGY DIFFERENCES BETWEEN THE Si AND THE Ge DANGLING BOND DEFECTS IN a-Si1-XGeX Alloys
Cho, S.M. ; Davidson, B.N. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1992.  pp.583-588,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
47.

Conference Proceedings
Conference Proceedings
47. Metastable Defect at Si-SiO2 Interfaces
Jing, Z. ; Lucovsky, G. ; Whitten, J. L.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.851-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
48.

Conference Proceedings
Conference Proceedings
48. Controlled Incorporation of Nitrogen at the Top Surface of Silicon Oxide Gate Dielectrics
Niimi, H. ; Koh, K. ; Lucovsky, G.
Pub. info.: Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A..  pp.103-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 446
49.

Conference Proceedings
Conference Proceedings
49. Spectroscopic Evidence for Near-Neighbor Bonded H(D) in a-Si:N:H(D) Thin Films
Lucovsky, G. ; Santos-Filho, P. ; Banerjee, A. ; Jing, Z.
Pub. info.: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.503-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 420
50.

Conference Proceedings
Conference Proceedings
50. Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides and -Nitrides Formed by Plasma CVD
Banerjee, A. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.405-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 420