1.

Conference Proceedings
Conference Proceedings
1. MORPHOLOGY AND INTERFACE CHEMISTRY OF THE INITIAL GROWTH OF GaN AND AIN ON α-SiC AND SAPPHIRE
Sitar, Z. ; Smith, L. S. ; Paisley, M. J. ; Davis, R. F.
Pub. info.: Interface dynamics and growth : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.583-588,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 237
2.

Conference Proceedings
Conference Proceedings
2. HETEROEPITAXIAL GROWTH AND CHARACTERIZATION OF TITANIUM FILMS ON ALPHA (6H) SILICON CARBIDE
Spellman, L. M. ; Glass, R. C. ; Davis, R. F. ; Humphreys, T. P. ; Jeon, Hyeongtag ; Namanich, R. J. ; Chevacharoenkul, Sopa ; Parikh, N. R.
Pub. info.: Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A..  pp.99-104,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 221
3.

Conference Proceedings
Conference Proceedings
3. Phonon Dynamics and Lifetimes on AlN and GaN Crytallites
Bergman, L. ; Alexson, D. ; Nemanich, R. J. ; Dutta, M. ; Stroscio, M. A. ; Balkas, C. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.65.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Low-Temperature Homoepitaxial Growth of GaN Using Hyperthermal Molecular Beams
Michel, A. ; Chen, E. ; Thomson, D. ; Nam, O. ; Davis, R. F. ; Lamb, H. H.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.437-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
5.

Conference Proceedings
Conference Proceedings
5. Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena
Edwards, N. V. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Kern, R. S. ; Liu, H. ; Stall, R. A. ; Wickenden, A. E. ; Doverspike, K. ; Gaskill, D. K. ; Freitas, J. A., Jr. ; Rossow, U. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.405-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
6.

Conference Proceedings
Conference Proceedings
6. Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures
Perry, W. G. ; Zheleva, T. ; Linthicum, K. J. ; Bremser, M. D. ; Davis, R. F. ; Shan, W. ; Song, J. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.847-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
7.

Conference Proceedings
Conference Proceedings
7. Strain Effects on Excitonic Transitions in GaN
Shan, W. ; Hauenstein, R. J. ; Fischer, A. J. ; Song, J. J. ; Perry, W. G. ; Bremser, M. D. ; Davis, R. F. ; Goldenberg, B.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.841-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
8.

Conference Proceedings
Conference Proceedings
8. Adhesion of ZrN and SiC Thin Films on Titanium and Nickel Alloys
Gruss, K. A. ; James. R. D. ; Davis, R. F.
Pub. info.: Covalent ceramics III - science and technology of non-oxides : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.383-,  1996.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 410
9.

Conference Proceedings
Conference Proceedings
9. Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
Gehrke, T. ; Linthicum, K. J. ; Thomson, D. B. ; Rajagopal, P. ; Batchelor, A. D. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
10.

Conference Proceedings
Conference Proceedings
10. Adhesion Evaluation of TiN and (Ti,Al)N Coatings on Titanium 6Al-4V
James, R. D. ; Paisley, D. L. ; Gruss, K. A. ; Parthasarthi, S. ; Tittman, B. R. ; Horie, Y. ; Davis, R. F.
Pub. info.: Covalent ceramics III - science and technology of non-oxides : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.377-,  1996.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 410
11.

Conference Proceedings
Conference Proceedings
11. Growth and Electrochemical Characterization of Single-Phase MoxN Films for the Fabrication of Hybrid Double-Layer Capacitors
Roberson, S. L. ; Evans, D. ; Finello, D. ; Davis, R. F.
Pub. info.: Materials for electrochemical energy storage and conversion II--batteries, capacitors, and fuel cells : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.669-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 496
12.

Conference Proceedings
Conference Proceedings
12. Growth of Bulk AlN and GaN Single Crystals by Sublimation
Balkas, C. M. ; Sitar, Z. ; Zheleva, T. ; Bergman, L. ; Shmagin, I. K. ; Muth, J. F. ; Kolbas, R. ; Nemanich, R. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.41-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
13.

Conference Proceedings
Conference Proceedings
13. Electrochemical Reactions of Molybdenum Nitride Electrodes in H2SO4 Electrolyte
Roberson, S. L. ; Finello, D. ; Davis, R. F.
Pub. info.: Electrochemical synthesis and modification of materials : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.555-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 451
14.

Conference Proceedings
Conference Proceedings
14. Ohmic Contact to n-GaN with TiN Diffusion Barrier
Kaminska, E. ; Piotrowska, A. ; Guziewicz, M. ; Kasjaniuk, S. ; Barcz, A. ; Dynowska, E. ; Bremser, M. D. ; Nam, O. H. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1055-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
15.

Conference Proceedings
Conference Proceedings
15. Doping of GaN by Ion Implantation: Does it Work?
Suvkhanov, A. ; Hunn, J. ; Wu, W. ; Thomson, D. ; Price, K. ; Parikh, N. ; Irene, E. ; Davis, R. F. ; Krasnobaev, L.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.475-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
16.

Conference Proceedings
Conference Proceedings
16. Relaxation Phenomena in GaN/AlN/6H-SiC Heterostructures
Edwards, N. V. ; Batchelor, A. D. ; Buyanova, I. A. ; Madsen, L. D. ; Bremser, M. D. ; Davis, R. F. ; Aspnes, D. E. ; Monemar, B.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.78.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
17.

Conference Proceedings
Conference Proceedings
17. Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
Linthicum, K. J. ; Gehrke, T. ; Thomson, D. B. ; Tracy, K. M. ; Carlson, E. P. ; Smith, T. P. ; Zheleva, T. S. ; Zorman, C. A. ; Mehregany, M. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.9.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
18.

Conference Proceedings
Conference Proceedings
18. AN HREM STUDY OF THE MICROSTRUCTURE OF Al CONTACT ON GaN/AlN/SiC THIN FILMS
Huang, Y. ; Smith, L. ; Kim. M. J. ; Carpenter, R. W. ; Davis, R. F.
Pub. info.: Evolution of thin film and surface structure and morphology : symposium held November 28-December 2, 1994, Boston, Massachusetts, USA.  pp.433-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 355
19.

Conference Proceedings
Conference Proceedings
19. Detection of Magnetic Resonance on Shallow Donor-Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC
Glaser, E. R. ; Kennedy, T. A. ; Brown, S. W. ; Freitas, J. A., Jr. ; Perry, W. G. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Davis, R. F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.667-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
20.

Conference Proceedings
Conference Proceedings
20. Synthesis and Characterization of Small Grain Sized Molybdenum Nitride Films
Roberson, S. L. ; Finello, D. ; Davis, R. F.
Pub. info.: Nanophase and nanocomposite materials II : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.173-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 457
21.

Conference Proceedings
Conference Proceedings
21. Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy
Nam, O. H. ; Bremser, M. D. ; Ward, B. L. ; Nemanich, R. J. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.107-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
22.

Conference Proceedings
Conference Proceedings
22. Achievement of Coalesced Oriented Diamond Films on Nickel by Optical Process Control and Methane Enrichment
Yang, P. C. ; Wolden, C. A. ; Liu, W. ; Schlesser, R. ; Davis, R. F. ; Prater, J. T. ; Sitar, Z.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.213-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
23.

Conference Proceedings
Conference Proceedings
23. Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams
Chen, E. ; Zhang, S. ; Michel, A. ; Davis, R. F. ; Lamb, H. H.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.331-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
24.

Conference Proceedings
Conference Proceedings
24. Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers
Nam, O. H. ; Zheleva, T. S. ; Bremser, M. D. ; Thomson, D. B. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
25.

Conference Proceedings
Conference Proceedings
25. Characterization of Be-Implanted GaN Annealed at High Temperatures
Ronning, C. ; Linthicum, K. J. ; Carlson, E. P. ; Hartlieb, P. J. ; Thomson, D. B. ; Gehrke, T. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.17.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
26.

Conference Proceedings
Conference Proceedings
26. Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
Thomson, D. B. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.37.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
27.

Conference Proceedings
Conference Proceedings
27. Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates
Davis, R. F. ; Nam, O-H. ; Zheleva, T. S. ; Bremser, M. D. ; Linthicum, K. J. ; Gehrke, T. ; Rajagopal, P. ; Thomson, D. B. ; Carlson, E. P.
Pub. info.: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.91-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 535
28.

Conference Proceedings
Conference Proceedings
28. Luminescence Related to Stacking Faults in Heteroepitaxially Grown Wurtzite GaN
Albrecht, M. ; Christiansen, S. ; Salviati, G. ; Zanotti-Fregonara, C. ; Rebane, Y. T. ; Shreter, Y. G. ; Mayer, M. ; Pelzmann, A. ; Kamp, M. ; Ebeling, K. J. ; Bremser, M. D. ; Davis, R. F. ; Strunk, H. P.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.293-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
29.

Conference Proceedings
Conference Proceedings
29. Recovery of Structural Defects in GaN After Heavy Ion Implantation
Ronning, C. ; Dalmer, M. ; Deicher, M. ; Restle, M. ; Bremser, M. D. ; Davis, R. F. ; Hofsass, H.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.407-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
30.

Conference Proceedings
Conference Proceedings
30. Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior
Kaminska, E. ; Piotrowska, A. ; Jasinski, J. ; Kozubowski, J. ; Barcz, A. ; Golaszewska, K. ; Thomson, D. B. ; Davis, R. F. ; Bremser, M. D.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G9.9.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
31.

Conference Proceedings
Conference Proceedings
31. Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures
Zheleva, T. S. ; Smith, S. A. ; Thomson, D. B. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Carlson, E. ; Ashmawi, W. M. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.38.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
32.

Conference Proceedings
Conference Proceedings
32. 3C-SiC buffer layers converted from Si at a low temperature
Liaw, H. M. ; Hong, S. Q. ; Fejes, P. ; Werho, D. ; Tompkins, H. ; Zollner, S. ; Wilson, S. R. ; Linthicum, K. J. ; Davis, R. F.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.219-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
33.

Conference Proceedings
Conference Proceedings
33. Nucleation and Growth of Oriented Diamond Films on Nickel Substrates
Yang, P. C. ; Liu, W. ; Tucker, D. A. ; Wolden, C. A. ; Davis, R. F. ; Glass, J. T. ; Prater, J. T. ; Sitar, Z.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.281-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
34.

Conference Proceedings
Conference Proceedings
34. Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect Devices
Therrien, R. J. ; Nam, O. H. ; Bremser, M. D. ; Lithicum, K. ; Nimii, H. ; Carlson, E. P. ; Lucovsky, G. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1107-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
35.

Conference Proceedings
Conference Proceedings
35. Ohmic Contact Formation to Doped GaN
Smith, L. L. ; Bremser, M. D. ; Carlson, E. P. ; Weeks, T. W., Jr. ; Huang, Y. ; Kim, M. J. ; Carpenter, R. W. ; Davis, R. F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.861-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
36.

Conference Proceedings
Conference Proceedings
36. Deposition of Gallium Nitride Films Using Ammonia and Triethylgallium Seeded Helium Beams
Sumakeris, J. J. ; Chilukuri, R. K. ; Davis, R. F. ; Lamb, H. H.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.331-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
37.

Conference Proceedings
Conference Proceedings
37. (Negative) Electron Affinity of AlN and AlGaN Alloys
Nemanich, R. J. ; Benjamin, M. C. ; Bozeman, S. P. ; Bremser, M. D. ; King, S. W. ; Ward, B. L. ; Davis, R. F. ; Chen, B. ; Zhang, Z. ; Bernholc, J.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.777-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
38.

Conference Proceedings
Conference Proceedings
38. TEM Analysis of the Observed Phases During the Growth of Oriented Diamond on Nickel Substrates
Liu, W. ; Yang, P. C. ; Tucker, D. A. ; Wolden, C. A. ; Davis, R. F. ; Glass, J. T. ; Prater, J. T. ; Sitar, Z.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.457-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
39.

Conference Proceedings
Conference Proceedings
39. Ni/Si-Based Ohmic Contacts to p- and n-Type GaN
Kaminska, E. ; Piotrowska, A. ; Barcz, A. ; Guziewicz, M. ; Kasjaniuk, S. ; Bremser, M. D. ; Davis, R. F. ; Dynowska, E. ; Kwiatkowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1077-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
40.

Conference Proceedings
Conference Proceedings
40. Location of Residual Donors in GaN Epitaxial Layers
Glaser, E. R. ; Kennedy, T. A. ; Wickenden, A. E. ; Koleske, D. D. ; Perry, W. G. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.561-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
41.

Conference Proceedings
Conference Proceedings
41. Growth and Doping of AlxGa1-xN Deposited Directly on α(6H)-SiC(0001) Substrates Viia Organometallic Vapor Phase Epitaxy
Bremser, M. D. ; Perry, W. G. ; Edwards, N. V. ; Zheleva, T. ; Parikh, N. ; Aspnes, D. E. ; Davis, R. F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.195-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
42.

Conference Proceedings
Conference Proceedings
42. Raman Analysis of Electron-Phonon Interactions in GaN Films
Bergman, L. ; Bremser, M. D. ; Christman, J. A. ; King, S. W. ; Davis, R. F. ; Nemanich, R. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.725-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
43.

Conference Proceedings
Conference Proceedings
43. Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters
Edwards, N. V. ; Yoo, S. D. ; Bremser, M. D. ; Horton, M. N. ; Perkins, N. R. ; Weeks, T. W., Jr. ; Liu, H. ; Stall, R. A. ; Kuech, T. F. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.781-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
44.

Conference Proceedings
Conference Proceedings
44. Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition
Linthicum, K. J. ; Gehrke, T. ; Thomson, D. ; Ronning, C. ; Carlson, E. P. ; Zorman, C. A. ; Mehregany, M. ; Davis, R. F.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.307-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
45.

Conference Proceedings
Conference Proceedings
45. Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer layers
Hong, S. Q. ; Liaw, H. M. ; Linthicum, K. ; Davis, R. F. ; Fejes, P. ; Zollner, S. ; Kottke, M. ; Wilson, S. R.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.407-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
46.

Conference Proceedings
Conference Proceedings
46. COMPOSITIONS AND CHEMICAL BONDING IN CERAMICS BY QUANTITATIVE ELECTRON ENERGY-LOSS SPECTROMETRY
Bentley, J. ; Horton, L. L. ; McHargue, C. J. ; McKernan, S. ; Carter, C. B. ; Revcolevschi, A. ; Tanaka, S. ; Davis, R. F.
Pub. info.: Determining nanoscale physical properties of materials by microscopy and spectroscopy.  pp.385-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 332
47.

Conference Proceedings
Conference Proceedings
47. Dislocation Luminescence in Wurtzite GaN
Shreter, Y. G. ; Rebane, Y. T. ; Davis, T. J. ; Barnard, J. ; Darbyshire, M. ; Steeds, J. W. ; Perry, W. G. ; Bremser, M. D. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.683-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
48.

Conference Proceedings
Conference Proceedings
48. Lattice Location and Luminescence Behavior of Rare-Earth Elements Implanted in GaN
Dalmer, M. ; Restle, M. ; Stotzler, A. ; Vetter, U. ; Hofsass, H. ; Bremser, M. D. ; Ronning, C. ; Davis, R. F. ; The Isolde Collaboration,
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1021-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
49.

Conference Proceedings
Conference Proceedings
49. In-Plane Optical Anisotropies of AlxGa1-xN Films in Their Regions of Transparency
Rossow, U. ; Edwards, N. V. ; Bremser, M. D. ; Kern, R. S. ; Liu, H. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.835-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
50.

Conference Proceedings
Conference Proceedings
50. Selected Energy Epitaxy of Gallium Nitride
Chilukuri, R. K. ; Zhang, Suian ; Chen, E. ; Davis, R. F. ; Lamb, H. H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.355-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449