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21 results

Conference Proceedings

1. New coordination method of multilayer network survivability

Zhao, J.H. ; Qu, H.

Pub. info.:	Network design and management : APOC 2002 : Asia-Pacific Optical and Wireless Communications : 16-18 October, 2002, Shanghai, China. pp.306-311, 2002. Bellingham, Washington. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4909

Conference Proceedings

2. Performance evaluation and principle of design for WDM ring protection networks

Zhao, J.H. ; Qu, H.

Pub. info.:	Network design and management : APOC 2002 : Asia-Pacific Optical and Wireless Communications : 16-18 October, 2002, Shanghai, China. pp.298-305, 2002. Bellingham, Washington. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4909

Conference Proceedings

3. Innovative approach for antimony-type superresolution near-field structure

Ou, D.R. ; Zhu, J. ; Zhao, J.H.

Pub. info.:	Advanced optical storage technology : 15-18 October, 2002, Shanghai, China. pp.433-438, 2002. Bellingham, Washington. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4930

Conference Proceedings

4. Optical Characterization of Ion-Implanted 4H-SiC

Feng, Z.C. ; Yan, F. ; Chang, W.Y. ; Zhao, J.H. ; Lin, J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.647-650, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

Luo, Y. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Wright, B. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1325-1328, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Li, X. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Burke, T. ; Khalil, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1345-1348, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

Li, X. ; Luo, Y. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1333-1336, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination

Yan, F. ; Qin, C. ; Zhao, J.H. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1305-1308, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. 4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW

Alexandrov, P. ; Wright, B. ; Pan, M. ; Weiner, M. ; Fursin, L. ; Zhao, J.H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1177-1180, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

Zhao, J.H. ; Li, X. ; Tone, K. ; Alexandrov, P. ; Pan, M. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1223-1226, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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