1.

Conference Proceedings
Conference Proceedings
1. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.447-450,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
Yaguchi, H. ; Narita, K. ; Hijikata, Y. ; Yoshida, S. ; Nakashima, S. ; Oyanagi, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.621-624,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1033-1036,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. The Properties of a P-Implanted GaN Light-Emitting Diode
Kikawa, J. ; Yoshida, S. ; Itoh, Y.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.423-426,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
8.

Conference Proceedings
Conference Proceedings
8. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393