1.

Conference Proceedings
Conference Proceedings
1. Optimization of Magnetic GaMnN for Use in Photonic Devices*
Thaler, G.T. ; Overberg, M.E. ; Gila, B. ; Abernathy, R.Frazier.C.R. ; Pearton, S.I ; Kim, J. ; Ren, F. ; Lee, I.S. ; Lee, S.Y. ; Park, Y.D. ; Khim, Z.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.58-63,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
2.

Conference Proceedings
Conference Proceedings
2. Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
Kim, J. ; Gila, B.P. ; Mehandnj, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.191-197,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
3.

Conference Proceedings
Conference Proceedings
3. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide
Kim. J. ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo. B. ; Oristine, A. ; Abernathy, C.R. ; Prarton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.184-190,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
4.

Conference Proceedings
Conference Proceedings
4. III-N Based Dilute Magnetic Semiconductors for Spintronics Applications*
Park, Y.D. ; Lee, J.S. ; Lee, S.-Y. ; Khim, Z.G. ; Oh, E. ; Thaler, G.T. ; Overberg, M.E. ; Abernathy, C.R. ; Pearton, S.J. ; Kim, J.-H ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.22-27,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
5.

Conference Proceedings
Conference Proceedings
5. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
6.

Conference Proceedings
Conference Proceedings
6. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
Kim, J. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.653-658,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
7.

Conference Proceedings
Conference Proceedings
7. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.659-664,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
8.

Conference Proceedings
Conference Proceedings
8. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.335-340,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
9.

Conference Proceedings
Conference Proceedings
9. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes
Allums, K. ; Luo, B. ; Mehandru, R. ; Gila, B.P. ; Dwivedi, R. ; Fogarty, T.N. ; Wilkins, R. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.713-718,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
10.

Conference Proceedings
Conference Proceedings
10. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693