1.

Conference Proceedings
Conference Proceedings
1. Sensitive Detection of Defects in α and β SiC by Raman Scattering
Nakashima, S. ; Nakatake, Y. ; Ishida, Y. ; Takahashi, T. ; Okumura, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.629-632,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Piezoelectric Field and Its Influence on the Pressure Behavior of the Light Emission From InGaN/GaN and GaN/AlGaN Quantum Wells
Suski, T. ; Perlin, P. ; Lepkowski, S.P. ; Teisseyre, H. ; Gorczyca, I. ; Prystawko, P. ; Leszczynski, M. ; Grandjean, N. ; Massies, J. ; Kitamura, T. ; Ishida, Y. ; Chichibu, S.F. ; Okumura, H.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.487-500,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
4.

Conference Proceedings
Conference Proceedings
4. Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells
Chichibu, S.F. ; Sugiyama, M. ; Onuma, T. ; Kuroda, T. ; Tackeuchi, A. ; Sota, T. ; Kitamura, T. ; Nakanishi, H. ; Ishida, Y. ; Okumura, H. ; Keller, S. ; Mishra, U.K. ; DenBaars, S.P. ; Nakamura, S.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.481-486,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
5.

Conference Proceedings
Conference Proceedings
5. RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy
Shen, X.Q. ; Ide, T. ; Shimizu, M. ; Okumura, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1461-1464,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect Transistor
Ide, T. ; Shimizu, M. ; Suzuki, A. ; Shen, X.-Q. ; Okumura, H. ; Nemoto, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1519-1522,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Surface Morphology of GaN Epilayer with SixN1-x Buffer Layer Grown by Ammonia-source MBE
Shimizu, M. ; Ohkita, H. ; Suzuki, A. ; Okumura, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1465-1468,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
Takahashi, T. ; Ishida, Y. ; Tsuchida, H. ; Kamata, I. ; Okumura, H. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.323-326,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.275-278,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393