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26 results

Conference Proceedings

1. Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8

Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.407-410, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method

Sasaki, M. ; Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.403-406, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Observation of 2in SiC Wafer by SWBXT at SPring-8

Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.411-414, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates

Nishiguchi, T. ; Masuda, Y. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.115-118, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity

Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.51-54, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. The Development of 4H-SiC {03-38} Wafers

Nakayama, K. ; Miyanagi, Y. ; Shiomi, H. ; Nishino, S. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.123-126, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Observation of Planar Defects in 2-inch SiC Wafer

Tanaka, H. ; Nishiguchi, T. ; Sasaki, M. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.79-82, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates

Nishiguchi, T. ; Masuda, Y. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.119-122, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. The Effect of Epitaxial Growth on Warp of SiC Wafers

Nakayama, K. ; Miyanagi, Y. ; Maruyama, K. ; Okamoto, Y. ; Shiomi, H. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.235-238, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System

Miyanagi, T. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.199-202, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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