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27 results

Conference Proceedings

1. Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Nakamura, S. ; Kumagai, H. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.651-654, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, J. ; Nakamura, S. ; Miura, M. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.659-662, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

Negoro, Y. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.783-786, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. 4H-SiC MOSFETs on (03-38) Face

Hirao, T. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Shiomi, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1065-1068, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. 4H-SiC MOSFETs on (03-38) Face

Hirao, T. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Shiomi, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1065-1068, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

Wahab, Q. ; Kosugi, H. ; Yano, H. ; Hallin, C. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1215-1218, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

Negoro, Y. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1273-1276, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

Onojima, N. ; Suda, J. ; Matsunami, H.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.139-144, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

Conference Proceedings

9. The Development of 4H-SiC {03-38} Wafers

Nakayama, K. ; Miyanagi, Y. ; Shiomi, H. ; Nishino, S. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.123-126, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Silicon Carbide Technology in New Era

Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.3-8, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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