1.

Conference Proceedings
Conference Proceedings
1. Surface State Characterization Methods for Si02 on 4H-SiC
LaRoche, I.R. ; Kim, J. ; Johnson, J.W. ; Luo, B. ; Kang, B.S. ; Mehandru, R. ; Irokawa, Y. ; Pearton, S.I. ; Chung, G. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.282-291,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
2.

Conference Proceedings
Conference Proceedings
2. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
3.

Conference Proceedings
Conference Proceedings
3. The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
Kang, B.S. ; Kim, S. ; Kim, J. ; Ren, F. ; Baik, K. ; Pearton, S.J. ; Gila, B.P. ; Abernathy, C.R. ; Pan, C.-C. ; Chen, G.-T. ; Chyi, J.-I. ; Chandrasekaran, V. ; Sheplak, M. ; Nishida, T. ; Chu, S.N.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.292-297,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
4.

Conference Proceedings
Conference Proceedings
4. AIGaN Power Rectifiers *
Pearton, S.J. ; Kim, J. ; Ren, F. ; Baik, K ; Gila, B.P. ; Abernathy, C.R. ; Irokawa, Y. ; Chyi, J-I. ; Park, S.S. ; Park, Y.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.180-207,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
5.

Conference Proceedings
Conference Proceedings
5. DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Ren, F. ; Pan, C-C. ; Chen, G.-T. ; Chyi, J.I. ; Park, S.S. ; Park, Y.J. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.214-222,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
6.

Conference Proceedings
Conference Proceedings
6. Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN *
Thaler, G.T. ; Overberg, M. ; Frazier, R. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Park, Y.D. ; Rairigh, R. ; Kelly, J. ; Lee, J.S. ; Theodoropoulou, N. ; Hebard, A.F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.141-145,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
7.

Conference Proceedings
Conference Proceedings
7. Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment
Moser, N. ; Fitch, R. ; Via, D. ; Crespo, A. ; Yannuzzi, M. ; Jessen, G. ; Gillespie, J. ; Luo, B. ; Ren, F. ; Abernathy, C. ; Pearton, S. ; Gila, B.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.57-67,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
8.

Conference Proceedings
Conference Proceedings
8. Mixing characteristics of InAlAs/InGaAs metal-semiconductor-metal optoelectronic mixers
Aliberti, K. ; Shen, H. ; Stann, B. ; Mehandru, R. ; Ren, F.
Pub. info.: Laser radar technology and applications VIII : 22-25 April 2003, Oriando, Florida, USA.  pp.369-376,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5086
9.

Conference Proceedings
Conference Proceedings
9. HVPE-Grown AlGaN/GaN HEMTs
Luo, B. ; Ren, F. ; Mastro, M. A. ; Tsvetkov, D. ; Pechnikov, A. ; Soukhoveev, V. ; Dmitriev, V. ; Baik, K. H. ; Pearton, S. J.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.45-56,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
10.

Conference Proceedings
Conference Proceedings
10. AlGaN/GaN Structures Grown by HVPE: Growth and Characterization
Mastro, M. A. ; Tsvetkov, D. V. ; Pechnikov, A. I. ; Soukhoveev, V. A. ; Gainer, G. H. ; Usikov, A. ; Dmitriev, V. ; Luo, B. ; Ren, F. ; Baik, K. H. ; Pearton, S. J.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.39-44,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764