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13 results

Conference Proceedings

1. High-Density Plasma Etching of Group-III Nitride Films for Device Application

Shul, R. ; Zhang, L ; Baca, A. ; Han, J. ; Crawford, M. ; Willison, C. ; Pearton, S. ; Ren, F. ; Zolper, J. ; Lester, L.

Pub. info.:	Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX). pp.25-39, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-4

Conference Proceedings

2. GaN Metal Oxide Semiconductor Field Effect Transistors

Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.

Pub. info.:	Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX). pp.169-173, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-4

Conference Proceedings

3. Reduction of Surface State Density in H2S Plasma-Treated GaAs

Shen, H. ; Zhou, W. ; Pamulapati, J. ; Ren, F.

Pub. info.:	Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX). pp.220-226, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-4

Conference Proceedings

4. Behavior of W and WSix Contact Metallization on n- and P-Type GaN

Cao, X. A. ; Ren, F. ; Lothian, J. R. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Cole, M. W. ; Zeitouny, A. ; Eizenberg, M. ; Shul, R. J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.39.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

5. Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition

Lee, J.W. ; Mackenzie, K.D. ; Johnson, D. ; Pearton, S.J. ; Ren, F. ; Sasserath, J.N.

Pub. info.:	Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.. pp.69-79, 1999. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	573

Conference Proceedings

6. Luminescence From Erbium-Doped Gallium Nitride Thin Films

Zavada, J. M. ; Thaik, M. ; Hommerich, U. ; Mackenzie, J. D. ; Abernathy, C. R. ; Ren, F. ; Shen, H. ; Pamulapati, J. ; Jiang, H. ; Lin, J. ; Wilson, R. G.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G11.1.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

7. Photoelectrochemical Etching of InxGa1-xN

Cho, H. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Han, J. ; Shul, R. J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.40.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Wet and dry etching characteristics of electron beam deposited SiO and SiO2

LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Pearton, S.J. ; Lambers, E.

Pub. info.:	Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.. pp.259-264, 1999. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	573

Conference Proceedings

9. MBE growth of oxides for III-N MOSFETs

Gila, B. ; Lee, K.N. ; Laroche, J. ; Ren, F. ; Donovan, S.M. ; Abernathy, C.R. ; Han, J.

Pub. info.:	Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.. pp.247-252, 1999. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	573

10.

Conference Proceedings

10. High-density plasma-induced etch damage of GaN

Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.

Pub. info.:	Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.. pp.271-280, 1999. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	573

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