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11 results

Conference Proceedings

1. First Principles Investigation of Vacancy Oxygen Defects in Si

Ewels,C.P. ; Jones,R. ; Oberg,S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1297-1302, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

2. The H2 Defect in Crystalline Germaniium

Budde,M. ; Nielsen,B.Bech ; Jones,R. ; Oberg,S. ; Goss,S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.879-884, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

3. The NNO Defect in Silicon

Rasmussen,F.Berg ; Oberg,S. ; Jones,R. ; Ewels,C. ; Goss,J. ; Miro,J. ; Deak,P.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.791-796, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

4. Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si

Jones,R. ; Oberg,S. ; Leary,P. ; Torres,V.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.785-790, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

5. Ni Complexes in Diamond

Goss,J. ; Resende,A. ; Jones,R. ; Oberg,S. ; Briddon,P.R.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.67-72, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

6. Theory of Si ｦﾄ-Doped GaAs

Jones,R. ; Oberg,S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.415-420, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

7. Theory of the NiH2 Complex in Si and the CuH2 Complex in GaAs

Jones,R. ; Goss,J. ; Oberg,S. ; Briddon,P.R. ; Resende,A.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.921-926, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

8. Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs

Breuer,S.J. ; Jones,R. ; Oberg,S. ; Briddon,P.R.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.951-956, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

9. Vacancy- and Acceptor-H Complexes in InP

Ewels,C.P. ; Oberg,S. ; Jones,R. ; Pajot,B. ; Briddon,P.R.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.969-974, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

10.

Conference Proceedings

10. H Interacting with Intrinsic Defects in Si

Nielsen,B.Bech ; Hoffmann,L. ; Budde,M. ; Jones,R. ; Goss,J. ; Oberg,S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.933-938, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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