1.

Conference Proceedings
Conference Proceedings
1. Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation
H. Matsuura ; H. Yanagisawa ; K. Nishino ; T. Nojiri ; S. Onoda
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.181-184,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
2.

Conference Proceedings
Conference Proceedings
2. Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
A. Koizumi ; N. Iwamoto ; S. Onoda ; T. Ohshima ; T. Kimoto
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.201-204,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
T. Ohshima ; N. Iwamoto ; S. Onoda ; T. Makino ; S. Nozaki
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.362-365,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680