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12 results

Conference Proceedings

1. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination

Templier, F. ; Ferret, P. ; Di Cioccio, L. ; Collard, E. ; Lhorte, A. ; Billon, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1161-1164, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Advances in SiC Materials and Technology for Schottky Diode Applications

Di Cioccio, L. ; Billon, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1119-1124, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography

Pernot, E. ; Neyret, E. ; Moulin, C. ; Pernot-Rejmankova, P. ; Templier, F. ; Cioccio, L.Di. ; Billon, T. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.419-422, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Pons, M. ; Meziere, J. ; Wang Tang Kuan, S. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.223-226, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1435-1438, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. QuaSiC Smart-Cut Substrates for SiC High Power Devices

Letertre, F. ; Jalaguier, E. ; Di Cioccio, L. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.151-154, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. QuaSiC Smart-Cut Substrates for SiC High Power Devices

Letertre, F. ; Jalaguier, E. ; Cioccio, L. D. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.151-154, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Advances in SiC Materials and Technology for Schottky Diode Applications

Cioccio, L. Di. ; Billon, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1119-1124, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Pons, M. ; Meziere, J. ; Wan.Tang.Kuan,S ; Blanquet, E. ; Ferret, P. ; Cioccio, L. Di. ; Billon, T. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.223-226, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1435-1438, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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