1.

Conference Proceedings
Conference Proceedings
1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.451-458,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. GaAs QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE
Hobson, W.S. ; Zussman, A. ; Levine, B.F. ; Pearton, S.J. ; Swaminathan, V. ; Luther, L.C.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.501-506,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
3.

Conference Proceedings
Conference Proceedings
3. REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES
Pearton, S.J. ; Chakrabarti, U.K. ; Baiocchi, F.A. ; Hobson, W.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.417-424,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
4.

Conference Proceedings
Conference Proceedings
4. THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE
Abernathy, C.R. ; Song, J. ; Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Bohling, D.A. ; Muhr, G.T.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.183-194,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
5.

Conference Proceedings
Conference Proceedings
5. Deuterium Introduction Into 6H and 3C-SiC Crystals and Thermal Stability with Annealing
Zavada, J.M. ; Wilson, R.G. ; Pearton, S.J. ; Lee, B.K. ; Steckl, A.J.
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium.  pp.100-107,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-17
6.

Conference Proceedings
Conference Proceedings
6. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
7.

Conference Proceedings
Conference Proceedings
7. The Effect Of Er Concentration On the Morphology and Photoluminescence of GaN:Er
Overberg, M. ; Brand, J. ; MacKenzie, J.D. ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.195-200,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
8.

Conference Proceedings
Conference Proceedings
8. The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Lambers, E. ; Pearton, S.J.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.238-244,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
9.

Conference Proceedings
Conference Proceedings
9. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems
Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.201-212,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
10.

Conference Proceedings
Conference Proceedings
10. Hydrogen Incorporation into III-V Nitrides During Processing
Pearton, S.J. ; Shul, R.J. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M. ; Abernathy, C.R. ; Vartuli, C.B. ; Lee, J.W. ; Mileham, J.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.178-186,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
11.

Conference Proceedings
Conference Proceedings
11. ECR Etching of Group-III Nitride Binary and Ternary Films
Shul, R.J. ; Howard, A.J. ; Pearton, S.J. ; Abernathy, C.R. ; Variuli, C.B. ; Barnes, P.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.217-230,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
12.

Conference Proceedings
Conference Proceedings
12. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
13.

Conference Proceedings
Conference Proceedings
13. High-Rate Etching of Metals for Magnetoelectronic Applications
Pearton, S.J. ; Jung, K.B. ; Hong, J. ; Lee, J.W. ; Caballero, J.A. ; Childress, J.R. ; Jenson, M. ; Hurst, A.T., Jr.
Pub. info.: Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII).  pp.270-285,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-21
14.

Conference Proceedings
Conference Proceedings
14. Evaluation of Erbium Doped III-Nitride Semiconductors for Optoelectronic Applications
Hoemmerich, U. ; Thaik, M. ; Zavada, J.M. ; Schwartz, R.N. ; Wilson, R.G. ; Pearton, S.J. ; Abernathy, C.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.110-118,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
15.

Conference Proceedings
Conference Proceedings
15. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
16.

Conference Proceedings
Conference Proceedings
16. High temperature Stable W and WSi contacts on n- and p-GaN
Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Zeitouny, A. ; Eisenber, M. ; Zopler, J.C. ; Abernathy, C.R. ; Han, J. ; Shul, R.J. ; Lothian, J.R.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.208-214,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
17.

Conference Proceedings
Conference Proceedings
17. PROPERTIES OF Pt/Ti CONTACTS TO III-V MATERIALS
Katz, A. ; Nakahara, S. ; Chu, S.N.G. ; Weir, B.E. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Savin, W.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.305-312,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
18.

Conference Proceedings
Conference Proceedings
18. ION MILLING DAMAGE IN InP AND GaAs
Pearton, S.J. ; Chakrabarti, U.K. ; Perley, A.P.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.507-512,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
19.

Conference Proceedings
Conference Proceedings
19. DRY ETCHING TECHNIQUES AND CHEMISTRIES FOR III-V SEMICONDUCTORS
Pearton, S.J.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.277-290,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
20.

Conference Proceedings
Conference Proceedings
20. Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
Ren, F. ; LaRoche, J. ; Anderson, T. ; Pearton, S.J. ; Lee, J.W. ; Johnson, D. ; Lothian, J.R. ; Lin, J. ; Weiner, J.S. ; Shul, R.J. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.513-519,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
21.

Conference Proceedings
Conference Proceedings
21. Electrical and Optical Properties of C, O and H in III-V Nitrides
Pearton, S.J. ; Lee, J.W. ; Abernathy, C.R. ; Wilson, R.G. ; Zavada, J.M. ; Zolper, J.C.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.209-219,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
22.

Conference Proceedings
Conference Proceedings
22. ION IMPLANT ACTIVATION AND REDISTRIBUTION IN AlXGa1-XAs
Pearton, S.J. ; Hobson, W.S. ; Von Neida, A.E. ; Haegel, N.M. ; Jones, K.S. ; Morris, N. ; Sealy, B.J.
Pub. info.: Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.665-670,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 157
23.

Conference Proceedings
Conference Proceedings
23. CHARACTERIZATION OF MODULATION DOPED PSEUDOMORPHIC A1GaAs/InGaAs/GaAs HEMT STRUCTURES BY ELECTRON BEAM ELECTROEREFLECTANCE AND PHOTOLUMINESCENCE
Herman, M.H. ; Ward, I.D. ; Kopf, R.F. ; Pearton, S.J. ; Jones, E.D.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.661-666,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
24.

Conference Proceedings
Conference Proceedings
24. HIGHLY RELIABLE WGe OHMIC CONTACT TO GaAs-AlGaAs HBTs
Fullowan, T.R. ; Ren, F. ; Tseng, B. ; Pearton, S.J. ; Abernathy, C.R. ; Harriott, L.R. ; Lane, E.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.239-246,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
25.

Conference Proceedings
Conference Proceedings
25. *ANOTHER STEP IN DEVELOPING A SINGLE WAFER INTEGRATED PROCESS: RAPID THERMAL LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION OF LOCAL DIFFUSED W(Zn) CONTACTS
Katz, A. ; Feingold, A. ; El-Roy, A. ; Moriya, N. ; Pearton, S.J. ; Rusby, A. ; Kovalchick, J. ; Abernathy, C.R. ; Geva, M. ; Lane, E.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.217-228,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
26.

Conference Proceedings
Conference Proceedings
26. TRI-LAYER LIFT-OFF METALLIZATION PROCESS USING LOW TEMPERATURE DEPOSITED SiNx
Lothian, J.R. ; Ren, F. ; Pearton, S.J. ; Chakrabarti, U.K. ; Abernathy, C.R. ; Katz, A.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.259-266,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
27.

Conference Proceedings
Conference Proceedings
27. GROWTH OF GaN, AIN AND InN BY ELECTRON CYCLOTRON RESONANCE-METAL ORGANIC MOLECULAR BEAM EPITAXY
Wisk, P.W. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Lothian, J.R. ; Katz, A. ; Jones, K.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.599-604,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
28.

Conference Proceedings
Conference Proceedings
28. Sn-H COMPLEX IN HYDROGEN PASSIVATED GaAs
Kozuch, D.M. ; Stavola, Michael J. ; Pearton, S.J. ; Abernathy, C.R. ; Lopata, J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.477-482,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
29.

Conference Proceedings
Conference Proceedings
29. SURFACE PROTECTION DURING PLASMA HYDROGENATION FOR ACCEPTOR PASSIVATION IN InPD
Lopata, J. ; Dautremont-Smith, W.C. ; Pearton, S.J. ; Lee, J.W. ; Ha, N.T. ; Luftman, H.S.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.501-510,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
30.

Conference Proceedings
Conference Proceedings
30. HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP
Swaminathan, V. ; Chakrabarti, U.K. ; Hobson, W.S. ; Caruso, R. ; Lopata, J. ; Pearton, S.J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.489-494,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
31.

Conference Proceedings
Conference Proceedings
31. ACCEPTOR DELTA-DOPING IN GaAs
Hobson, W.S. ; Pearton, S.J. ; Abernathy, C.R. ; Cabaniss, G.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.855-860,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
32.

Conference Proceedings
Conference Proceedings
32. ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2
Pearton, S.J. ; Hobson, W.S. ; Jones, K.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.425-430,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
33.

Conference Proceedings
Conference Proceedings
33. InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE
Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Wisk, P.W. ; Esagui, R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
34.

Conference Proceedings
Conference Proceedings
34. CHARACTERISTICS OF 56 MeV OXYGEN IMPLANTATION INTO Si AND III-V SEMICONDUCTORS
Pearton, S.J. ; Jalali, B. ; Poate, J.M. ; Fox, J.D. ; Kemper, K.W. ; Magee, C.W. ; Jones, K.S.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.271-276,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
35.

Conference Proceedings
Conference Proceedings
35. REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2
Ren, F. ; Pearton, S.J. ; Lothian, J.R. ; Abernathy, C.R. ; Hobson, W.S.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.529-536,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
36.

Conference Proceedings
Conference Proceedings
36. DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs
Pearton, S.J. ; Ren, F. ; Katz, A. ; Chakrabarti, U.K. ; Lane, E. ; Hobson, W.S. ; Kopf, R.F. ; Abernathy, C.R. ; Wu, C.S. ; Bohling, D.A. ; Ivankovits, J.C.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.131-138,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
37.

Conference Proceedings
Conference Proceedings
37. IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS
Pearton, S.J. ; Chakrabarti, U.K. ; Katz, A. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Fullowan, T.R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.123-130,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
38.

Conference Proceedings
Conference Proceedings
38. Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges
Zolper, J.C. ; Pearton, S.J.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.76-82,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
39.

Conference Proceedings
Conference Proceedings
39. The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides
Vartuli, C.B. ; Pearton, S.J. ; Abernathy, C.R. ; Shul, R.J. ; Ren, F.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.39-56,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
40.

Conference Proceedings
Conference Proceedings
40. A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN
Cole, M.W. ; Eckart, D.W. ; Han, W.Y ; Pfeffer, R.L. ; Monahan, T. ; Ren, F. ; Yuan, C. ; Stall, R.A. ; Pearton, S.J. ; Li, Y. ; Lu, Y.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.187-197,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
41.

Conference Proceedings
Conference Proceedings
41. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
42.

Conference Proceedings
Conference Proceedings
42. Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source
Cole, M.W. ; Han, W.Y. ; Pfeffer, R.L. ; Eckart, D.W. ; Pang, S.W. ; Ko, K.K. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Caballero, J.A. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.293-306,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
43.

Conference Proceedings
Conference Proceedings
43. Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma
Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Cole, M.W. ; Caballero, J.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.346-353,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
44.

Conference Proceedings
Conference Proceedings
44. Device Processing of Wide Bandgap Semiconductors - Challenges and Directions
Pearton, S.J. ; Ren, F. ; Shul, R.J. ; Zolper, J.C.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.138-161,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
45.

Conference Proceedings
Conference Proceedings
45. Magnetron Reactive Ion Etching of III-V Nitride Semiconductors
McLane, G.F. ; Pearton, S.J. ; Abernathy, C.R.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.204-216,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
46.

Conference Proceedings
Conference Proceedings
46. *FERMI RESONANCE EFFECTS ON THE VIBRATION MODES OF HYDROGEN-PASSIVATED BORON IN SILICON
Watkins, G.D. ; Fowler, W.B. ; Deleo, G.G. ; Stavola, M. ; Kozuch, D.M. ; Pearton, S.J. ; Lopata, J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.367-376,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
47.

Conference Proceedings
Conference Proceedings
47. Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition
Lee, J.W. ; Mackenzie, K.D. ; Johnson, D. ; Pearton, S.J. ; Ren, F. ; Sasserath, J.N.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.69-79,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
48.

Conference Proceedings
Conference Proceedings
48. Wet and dry etching characteristics of electron beam deposited SiO and SiO2
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Pearton, S.J. ; Lambers, E.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.259-264,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
49.

Conference Proceedings
Conference Proceedings
49. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
50.

Conference Proceedings
Conference Proceedings
50. Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, D.C. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Han, J. ; Shul, R.J. ; Cho, H. ; Jung, K.B. ; Ren, F. ; Hahn, Y.B.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.281-286,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
51.

Conference Proceedings
Conference Proceedings
51. REACTIVE ION ETCHING OF III-V SEMICONDUCTORS USING HYDROGENATED CHLOROFLUOROCARBON MIXTURES
Pearton, S.J. ; Hobson, W.S. ; Chakrabarti, U.K. ; Derkits, G.E. ; Perley, A.P.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.37-42,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
52.

Conference Proceedings
Conference Proceedings
52. Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy
MacKenzie, J.D. ; Abernathy, C.R. ; Pearton, S.J. ; Chu, S.N.G. ; Hobson, W.S.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.70-77,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
53.

Conference Proceedings
Conference Proceedings
53. ECR, ICP and RIE plasma etching of GaN
Shul, R.J. ; McClellan, G.B. ; Rieger, D.J. ; Hafich, M.J. ; Drummond, T.J. ; Pearton, S.J. ; Abernathy, C.R. ; Constantine, C. ; Barratt, C. ; Karlicek, R.F., Jr. ; Tran, A.C. ; Schurmann, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.159-167,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
54.

Conference Proceedings
Conference Proceedings
54. Effect of hydrogen on Ca and Mg acceptors in GaN
Lee, J.W. ; Pearton, S.J. ; Zolper, J.C. ; Stall, R.A.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.100-109,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
55.

Conference Proceedings
Conference Proceedings
55. III-Nitride ion implantation and device processing
Zolper, J.C. ; Shul, R.J. ; Baca, A.G. ; Pearton, S.J. ; Abernathy, C.R. ; Wilson, R.G. ; Stall, R.A. ; Shur, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.149-158,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
56.

Conference Proceedings
Conference Proceedings
56. Ion implantation processing of GaN epitaxial layers
Tan, H.H. ; Williams, J.S. ; Zou, J. ; Cockayne, D.J.H. ; Pearton, S.J. ; Yuan, C.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.142-148,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
57.

Conference Proceedings
Conference Proceedings
57. Ohmic contacts on binary and ternary nitrides
Ren, F. ; Pearton, S.J. ; Donovan, S. ; Abernathy, C.R. ; Cole, M.W.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.122-128,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
58.

Conference Proceedings
Conference Proceedings
58. Dry Etching and Implantation Characteristics of III-N Alloys
Pearton, S.J. ; Vartuli, C.B. ; Shul, R.J. ; Zolper, J.C.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.108-122,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
59.

Conference Proceedings
Conference Proceedings
59. Silicon Nitride Passivation for InP Based Devices
Ren, F. ; Buckley, N. ; Lee, K. ; Pearton, S.J. ; Bartynski, R.A. ; Constantine, C. ; Hobson, W.S. ; Chao, P.C.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.187-196,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
60.

Conference Proceedings
Conference Proceedings
60. Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric
Ren, F. ; Lothian, J.R. ; Pearton, S.J. ; Wilson, R.G. ; LaRoche, J.R. ; Lee, J.W. ; Johnson, D. ; Zavada, J.M.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.183-187,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
61.

Conference Proceedings
Conference Proceedings
61. The Role of AlN Encapsulation of GaN During Implant Activation Annealing
Zolper, J.C. ; Pearton, S.J. ; Rieger, D.J. ; Baca, A.G. ; Lee, J.W. ; Vartulli, C.R. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.244-248,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
62.

Conference Proceedings
Conference Proceedings
62. Comparison of ICI and IBr Plasma Chemistries for Etching of InGaAlP Alloys
Hong, J. ; Lee, J.W ; Lambers, E.S. ; Abernathy, C.R ; Pearton, S.J. ; Constantine, C. ; Hobson, W.S.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.56-64,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
63.

Conference Proceedings
Conference Proceedings
63. A Structural and Chemical Investigation of WSi Ohmic Contacts to n+-GaN
Cole, M.W. ; Eckart, D.W ; Han, W.Y. ; Monahan, T. ; Ren, F. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.271-277,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
64.

Conference Proceedings
Conference Proceedings
64. Effect of Dry Etching in III-Nitride Surface Properties
Ren, F. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C.B. ; Karlicek, B. ; Karlicek, R.F., Jr. ; MacKenzie, J.D. ; Wilson, R.G.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.289-297,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
65.

Conference Proceedings
Conference Proceedings
65. Critical Issues of III-V Compound Semiconductor Processing
Pearton, S.J.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.132-147,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
66.

Conference Proceedings
Conference Proceedings
66. Plasma-Induced-Damage of GaN
Shul, R.J. ; Zolper, J.C. ; Hagerott Crawford, M. ; Hickamn, R.J. ; Briggs, R.D. ; Pearton, S.J. ; Lee, J.W. ; Karlicek, R.F., Jr. ; Tran, C. ; Schurman, M. ; Constantine, C. ; Barratt, C.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.232-243,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
67.

Conference Proceedings
Conference Proceedings
67. ICP Etching of GaAs Via Hole Contacts
Shul, R.J. ; Baca, A.G. ; Briggs, R.D. ; McClellan, G.B. ; Pearton, S.J. ; Constantine, C.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.84-92,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
68.

Conference Proceedings
Conference Proceedings
68. The Role of Hydrogen Incorporated into III-V Semiconductors During Growth and Processing
Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII).  pp.317-325,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-6
69.

Conference Proceedings
Conference Proceedings
69. High Rate ECR Etching of III-V Nitride Materials
Shul, R.J. ; Howard, A.J. ; Kilcoyne, S.P. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C.B. ; Barnes, P.A. ; Bozack, M.J.
Pub. info.: Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII).  pp.209-225,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-6
70.

Conference Proceedings
Conference Proceedings
70. Status of Ion Implantation Doping and Isolation of III-V Nitrides
Zolper, J.C. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C. B. ; Yuan, C. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.144-151,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
71.

Conference Proceedings
Conference Proceedings
71. High Quality P-type GaN and InGaN Epitaxial Growth on C-Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD Reactor
Yuan, C. ; Salagaj, T. ; Gurary, A. ; Thompson, A.G. ; Kroll, W. ; Stall, R.A. ; Schurman, M. ; Hwang, C.-Y ; Li, Y. ; Mayo, W.E. ; Lu, Y. ; Krishnankutty, S. ; Kolbas, R.M. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.10-25,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21