1.

Conference Proceedings
Conference Proceedings
1. QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
Lucovsky, G. ; Ma, Y. ; He, S.S. ; Yasuda, T. ; Stephens, D.J. ; Habermehl, S.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
2.

Conference Proceedings
Conference Proceedings
2. ELECTRICAL PROPERTIES OF OXIDE-NITRIDE-OXIDE, ONO, HETEROSTRUCTURES FABRICATED BY LOW TEMPERATURE REMOTE PECVD
Ma, Y. ; Yasuda, T. ; Chen, Y.L. ; Lucovsky, G. ; Maher, D.M.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.147-152,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
3.

Conference Proceedings
Conference Proceedings
3. HIGH CHANNEL MOBILITY a-Si:H THIN FILM TRANSISTORS WITH OXIDE-NITRIDE DIELECTRICS
He, S.S. ; Stephens, D.J. ; Lucovsky, G. ; Hamaker, R.W.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.413-418,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
4.

Conference Proceedings
Conference Proceedings
4. HYDROGENATED AMORPHOUS SILICON-NITROGEN, a-Si,N:H ALLOYS: AN ALTERNATIVE TO a-Si,C:H FOR THE WIDE BAND GAP PHOTO-ACTIVE MATERIAL IN TANDEM PV CELLS
Williams, M.J. ; Cho, S.M. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.759-766,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
5.

Conference Proceedings
Conference Proceedings
5. a-Si:H THIN FILM TRANSISTORS AND LOGIC CIRCUITS FABRICATED IN AN INTEGRATED MULTICHAMBER SYSTEM
Kim, S. S. ; Wang, C. ; Parsons, G. N. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A..  pp.373-378,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 192
6.

Conference Proceedings
Conference Proceedings
6. STUDIES OF SiH2Cl2/H2 GAS PHASE CHEMISTRY FOR SELECTIVE THIN FILM GROWTH OF CRYSTALLINE SILICON, c-Si, USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Theil, J.A. ; Lucovsky, G. ; Hattangady, S.V. ; Fountain, G.G. ; Markunas, R.J.
Pub. info.: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.601-612,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 220
7.

Conference Proceedings
Conference Proceedings
7. ELECTRON MICROSCOPY STUDIES OF UNDOPED AND PHOSPHORUS DOPED Si:H AND Si,C:H FILMS
Chen, Y.L. ; Bentley, J. ; Wang, C. ; Lucovsky, G. ; Maher, D.M.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.711-716,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
8.

Conference Proceedings
Conference Proceedings
8. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Photons and low energy particles in surface processing : symposium held Decmber[i.e. December] 3-6, 1991, Boston, Massachusetts, U.S.A..  pp.341-348,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 236
9.

Conference Proceedings
Conference Proceedings
9. DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)
Wang, C: ; Bjorkman, C.H. ; Lee, D.R. ; Williams, M.J. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.277-282,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
10.

Conference Proceedings
Conference Proceedings
10. DEPOSITION OF GaN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (Remote PECVD)
Choi, S.W. ; Bachmann, K.J. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.195-200,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
11.

Conference Proceedings
Conference Proceedings
11. A SPECTROSCOPIC INVESTIGATION OF THE AMORPHOUS TO MICROCRYSTALLINE TRANSITION IN SILICON PREPARED BY REACTIVE MAGNETRON SPUTTERING
Turner, W.A. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.521-526,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
12.

Conference Proceedings
Conference Proceedings
12. INTEGRATED PREDEPOSITION CLEANING/PASSIVATION OF Si SURFACES FOR MOS DEVICES WITH Si02/Si INTERFACES
Hattangady, S. ; Misra, V. ; Yasuda, T. ; Xu, X.L. ; Hornung, B. ; Lucovsky, G. ; Wortman, J.J.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.288-295,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
13.

Conference Proceedings
Conference Proceedings
13. THE INTERACTION OF HYDROGEN PLASMAS WITH Ga-BASED Ill-V SEMICONDUCTOR SURFACES
Lu, Z. ; Habermehl, S. ; Lucovsky, G. ; Dietz, N. ; Bachmann, K.J. ; Osgood, R.M.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.416-424,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
14.

Conference Proceedings
Conference Proceedings
14. Preparation of Ultrathin Oxide Films by Low-Temperature Remote Plasma-Assisted Process
Niimi, H. ; Koh, K. ; Lucovsky, G.
Pub. info.: Proceedings of the eleventh International Symposium on Plasma Processing.  pp.623-630,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-12
15.

Conference Proceedings
Conference Proceedings
15. Controlled Nitrogen Incorporation at Si-SiO2 Interfaces by Re- mote Plasma Assisted Processing
Koh, K. ; Niimi, H. ; Lucovsky, G.
Pub. info.: Proceedings of the eleventh International Symposium on Plasma Processing.  pp.631-638,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-12
16.

Conference Proceedings
Conference Proceedings
16. IMPROVED ELECTRICAL PERFORMANCE OF a-Si:H THIN FILM TRANSISTORS, TFTs WITH n+ μc-Si CONTACT, AND SILICON OXIDE AND NITRIDE DUAL-LAYER DIELECTRICS
He, S.S. ; Stephens, D.J. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A..  pp.871-876,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 297
17.

Conference Proceedings
Conference Proceedings
17. Si3N4/SiO2 MULTI-LAYER REFLECTING STACKS FOR PHOTONIC SWITCHING APPLICATIONS
Stephens, D.J. ; He, S.S. ; Lucovsky, G. ; Mikkelsen, H. ; Leo, K. ; Kurz, H.
Pub. info.: Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A..  pp.223-228,  1993.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 298
18.

Conference Proceedings
Conference Proceedings
18. FORMATION OF MULTILAYER SiO2-SiOx HETEROSTRUCTURES BY CONTROL OF REACTION PATHWAYS IN REMOTE PECVD
Tsu, D.V. ; Kim, S.S. ; Theil, J.A. ; Wang, Cheng ; Lucovsky, G.
Pub. info.: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.209-214,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 165
19.

Conference Proceedings
Conference Proceedings
19. CONTRIBUTIONS TO SILICON-HYDROGEN BOND-STRETCHING FREQUENCY IN AMORPHOUS Si ALLOYS
Jing, Z. ; Whitten, J.L. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1992.  pp.287-292,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
20.

Conference Proceedings
Conference Proceedings
20. DEFECT STATES AND STRUCTURAL DISORDER IN a-Si
Davidson, B. N. ; Lucovsky, G. ; Bernholc, J.
Pub. info.: Amorphous silicon technology, 1992.  pp.263-268,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
21.

Conference Proceedings
Conference Proceedings
21. RAMAN SCATTERING FROM MICROCRYSTALLINE FILMS: CONSIDERATIONS OF COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL ABSORPTION PROPERTIES
Nemanich, R.J. ; Buehler, E.C. ; LeGrice, Y.M. ; Shroder, R.E. ; Parsons, G.N. ; Wang, C. ; Lucovsky, G. ; Boyce, J.B.
Pub. info.: Materials issues in microcrystalline semiconductors : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.265-270,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 164
22.

Conference Proceedings
Conference Proceedings
22. DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE Si,C ALLOY THIN FILMS BY A REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS
Wang, C. ; Lucovsky, G. ; Nemanich, R.J.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.751-756,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
23.

Conference Proceedings
Conference Proceedings
23. STRAIN DEPENDENT DIFFUSION IN THE DRY THERMAL OXIDATION PROCESS OF CRYSTALLINE Si
Bjorkman, C. H. ; Lucovsky, G.
Pub. info.: Thin films : stresses and mechanical properties III : symposium held December 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.81-86,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 239
24.

Conference Proceedings
Conference Proceedings
24. CHEMICALLY MODIFIED SECOND HARMONIC GENERATION AT SURFACES ON VICINAL Si(111) WAFERS
Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H. ; Bjorkman, C.H. ; Shearon, Jr., C.E. ; Ma, Y. ; Yasuda, T. ; Lucovsky, G.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.815-820,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
25.

Conference Proceedings
Conference Proceedings
25. THE OPTICAL PROPERTIES OF PLASMA-DEPOSITED SiO2 AND Si3N4 BRAGG REFLECTORS IN THE SPECTRAL RANGE FROM 1.8 TO 3.0 eV
Stephens, D.J. ; He, S.S. ; Lucovsky, G. ; Mikkelsen, H. ; Leo, K. ; Kurz, H.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.809-814,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
26.

Conference Proceedings
Conference Proceedings
26. Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF Si
Yasuda, T. ; Ma, Y. ; Habermehl, S. ; Kim, S.S. ; Lucovsky, G. ; Schneider, T.P. ; Cho, J. ; Nemanich R.J.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
27.

Conference Proceedings
Conference Proceedings
27. COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE TO ATOMIC H PRIOR TO OXIDATION AND DEPOSITION
Yasuda, T. ; Ma, Y. ; Habermechl, S. ; Lucovsky, G.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.473-480,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
28.

Conference Proceedings
Conference Proceedings
28. BARRIER LIMITED TRANSPORT MECHANISMS IN DOPED μc-Si AND μc-Si, C
Lucovsky, G. ; Wang, C.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.377-382,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
29.

Conference Proceedings
Conference Proceedings
29. STUDIES OF MOS HETEROJUNCTION DEVICES USING DOPED μc-Si AND a-Si
Lee, D.R. ; Bjorkman, C.H. ; Wang, C. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
30.

Conference Proceedings
Conference Proceedings
30. DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD
Williams, M.J. ; Wang, C. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.388-394,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
31.

Conference Proceedings
Conference Proceedings
31. *TRANSPORT AND MICROSTRUCTURE OF MICROCRYSTALLINE SILICON ALLOYS
Lucovsky, G. ; Wang, C. ; Williams, M.J. ; Chen, Y.L. ; Maher, D.M.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.443-454,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
32.

Conference Proceedings
Conference Proceedings
32. PHOTOLUMINESCENCE IN B-DOPED μc-Si:H
Gu, S.Q. ; Viner, J.M. ; Taylor, P.C. ; Williams, M.J. ; Turner, W.A. ; Lucovsky, G.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.579-584,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
33.

Conference Proceedings
Conference Proceedings
33. ELECTRICAL PROPERTIES OF BORON-DOPED μc-Si:H PREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si TARGETS
Turner, W.A. ; Williams, M.J. ; Chen, Y.L. ; Maher, D.M. ; Lucovsky, G.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.567-572,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
34.

Conference Proceedings
Conference Proceedings
34. CONTROL OF PROCESS-INDUCED DEFECTS IN THE FORMATION OF SINGLE AND MULTIPLE LAYER DIELECTRIC STRUCTURES FOR Si SEMICONDUCTOR DEVICES
He, S. S. ; Stephens, D. J. ; Ma. Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.653-658,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
35.

Conference Proceedings
Conference Proceedings
35. POLYHYRIDE BONDING GROUPS IN PECVD AMORPHOUS Si THIN FILMS
Davidson, B.N. ; Parsons, G.N. ; Wang, C. ; Lucovsky, G.
Pub. info.: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.173-180,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 165
36.

Conference Proceedings
Conference Proceedings
36. LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS
Yasuda, T. ; ma, Y. ; Lucovsky, G.
Pub. info.: Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.713-720,  1992.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 238
37.

Conference Proceedings
Conference Proceedings
37. WORK FUNCTION DIFFERENCE BETWEEN N-TYPE μc-Si GATE ELECTRODES DEPOSITED BY REMOTE PECVD AND P-TYPE c-Si SUBSTRATES IN MOS CAPACITORS
Lee, D.R. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1992.  pp.979-984,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
38.

Conference Proceedings
Conference Proceedings
38. ELECTRONIC STATES IN THE GAP OF a-Si FROM BOND ANGLE VARIATIONS
Davidson, B. N. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A..  pp.279-284,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 192
39.

Conference Proceedings
Conference Proceedings
39. FORMATION OF MICROCRYSTALLINE SILICON FILM BY RMS PROCES
Wang, Cheng ; Parsons, G.N. ; Buehler, E.C. ; Memanich, R.J. ; Lucovsky, G.
Pub. info.: Materials issues in microcrystalline semiconductors : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.21-26,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 164
40.

Conference Proceedings
Conference Proceedings
40. A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES OF INTERFACIAL TRAPS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; He, S.S. ; Stephens, D.J. ; Lucovsky, G.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
41.

Conference Proceedings
Conference Proceedings
41. SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)
Lamb, H.H. ; Kalem, S. ; Bedge, S. ; Yasuda, T. ; Ma, Y. ; Lucovsky, G.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.75-80,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
42.

Conference Proceedings
Conference Proceedings
42. CHANNEL LAYER SURFACE MODIFICATIONS IN a-Si:H THIN FILM TRANSISTORS WITH OXIDE/NITRIDE DIELECTRIC LAYERS
He, S.S. ; Stephens, D.J. ; Hamaker, R.W. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.505-510,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
43.

Conference Proceedings
Conference Proceedings
43. INTEGRATED, DUAL-FUNCTION REMOTE PLASMA-ENHANCED PROCESSING APPLIED TO LOW DAMAGE SiO2 ETCHING AND REMOVAL OF C-F POLYMER RESIDUES
Yasuda, T. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.523-528,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
44.

Conference Proceedings
Conference Proceedings
44. NITROGEN INCORPORATION IN a-Si, N:H ALLOY FILMS PRODUCED BY REMOVE PECVD
Parsons, G.N. ; Lucovsky, G.
Pub. info.: Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A..  pp.85-90,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 165
45.

Conference Proceedings
Conference Proceedings
45. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.799-806,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
46.

Conference Proceedings
Conference Proceedings
46. ENERGY DIFFERENCES BETWEEN THE Si AND THE Ge DANGLING BOND DEFECTS IN a-Si1-XGeX Alloys
Cho, S.M. ; Davidson, B.N. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1992.  pp.583-588,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
47.

Conference Proceedings
Conference Proceedings
47. Metastable Defect at Si-SiO2 Interfaces
Jing, Z. ; Lucovsky, G. ; Whitten, J. L.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.851-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
48.

Conference Proceedings
Conference Proceedings
48. Controlled Incorporation of Nitrogen at the Top Surface of Silicon Oxide Gate Dielectrics
Niimi, H. ; Koh, K. ; Lucovsky, G.
Pub. info.: Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A..  pp.103-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 446
49.

Conference Proceedings
Conference Proceedings
49. Spectroscopic Evidence for Near-Neighbor Bonded H(D) in a-Si:N:H(D) Thin Films
Lucovsky, G. ; Santos-Filho, P. ; Banerjee, A. ; Jing, Z.
Pub. info.: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.503-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 420
50.

Conference Proceedings
Conference Proceedings
50. Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides and -Nitrides Formed by Plasma CVD
Banerjee, A. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.405-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 420
51.

Conference Proceedings
Conference Proceedings
51. Ultralow Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low-Temperature Processed Si/SiO2 Structures by a 900｡？30-Second Rapid Thermal Anneal
Lucovsky, G. ; Hinds, B.
Pub. info.: Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.355-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 470
52.

Conference Proceedings
Conference Proceedings
52. Remote Plasma-Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)x-(SiO2)1-x (x ｡？0.5), Thin Films for Advanced High-K Gate Dielectrics
Wolfe, D. ; Flock, K. ; Therrien, R. ; Johnson, R. ; Rayner, B. ; Gunther, L. ; Brown, N. ; Claflin, B. ; Lucovsky, G.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.343-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
53.

Conference Proceedings
Conference Proceedings
53. Low-Temperature (450｡？ Poly-Si Thin Film Deposition on SiO2 and Glass Using a Microcrystalline-Si Seed Layer
Wolfe, D. M. ; Wang, F. ; Lucovsky, G.
Pub. info.: Polycrystalline thin films : structure, texture, properties and applications III : symposium held March 31-April 3, 1997, San Francisco, California, U.S.A..  pp.427-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 472
54.

Conference Proceedings
Conference Proceedings
54. Bonded Hydrogen Atom Participation in Metastable Defect Formation in Hydrogenated Amorphous Silicon
Lucovsky, G. ; Yang, H.
Pub. info.: Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14-17, 1998, San Francisco, California, U.S.A..  pp.715-,  1999.  Warrendale.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 507
55.

Conference Proceedings
Conference Proceedings
55. Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces
Koh, K. ; Niimi, H. ; Lucovsky, G.
Pub. info.: Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A..  pp.267-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 446
56.

Conference Proceedings
Conference Proceedings
56. Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition
Stevens, G. ; Santos-Filho, P. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1995 : Symposium held April 18-21, 1995, San Francisco, California, U.S.A..  pp.313-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 377
57.

Conference Proceedings
Conference Proceedings
57. Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing
Hattangady, S. V. ; Niimi, H. ; Gandhi, S. ; Lucovsky, G.
Pub. info.: Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.213-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 387
58.

Conference Proceedings
Conference Proceedings
58. Ultrathin Silicon Oxide and Nitride - Silicon Interface States
Brillson, L. J. ; Young, A. P. ; Schafer, J. ; Niimi, H. ; Lucovsky, G.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.549-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
59.

Conference Proceedings
Conference Proceedings
59. Bonding Defects in Hydrogenated Amorphous Silicon
Lucovsky, G. ; Yang, H.
Pub. info.: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.629-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 420
60.

Conference Proceedings
Conference Proceedings
60. Process Diagnostics for Remote Plasma-Enhanced Chemical Vapor Desposition (PECVD) of Silicon Nitrides
Banerjee, A. ; Lucovsky, G.
Pub. info.: Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.63-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 406
61.

Conference Proceedings
Conference Proceedings
61. Hydrogen Assisted Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Nitride Films
Santos-Filho, P. ; Koh, K. ; Stevens, G. ; Lucovsky, G.
Pub. info.: Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.57-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 406
62.

Conference Proceedings
Conference Proceedings
62. Low pH Chemical Etch Route for Smooth H-Terminated Si(100) and Study of Subsequent Chemical Stability
Hinds, B. J. ; Aspnes, D. E. ; Lucovsky, G.
Pub. info.: Science and technology of semiconductor surface preparation : symposium held April 1-3, 1997, San Francisco, California, U.S.A..  pp.191-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 477
63.

Conference Proceedings
Conference Proceedings
63. CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES
Lucovsky, G. ; Yasuda, T. ; Ma, Y. ; Hattangady, S. V. ; Xu, X-L. ; Misra, V. ; Hornung, B. ; Wortman, J. J.
Pub. info.: Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.81-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 318
64.

Conference Proceedings
Conference Proceedings
64. Defect Reduction in Remote Plasma Deposited Silicon Nitride by Post-Deposition Rapid Thermal Annealing
Lucovsky, G. ; Parker, C. R. ; Wu, Y. ; Hauser, J. R.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.187-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
65.

Conference Proceedings
Conference Proceedings
65. Cathodoluminescence Studies of Si-SiO2 Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing
Schafer, J. ; Young, A. P. ; Brillson, L. J. ; Niimi, H. ; Lucovsky, G.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.151-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
66.

Conference Proceedings
Conference Proceedings
66. Evaluation and Comparison of 3.0nm Gate-Stack Dielectrics for Tenth-Micron Technology NMOSFETs
Yee, K. F. ; Osburn, C. M. ; Masnari, N. A. ; Hauser, J. R. ; Parker, C. G. ; Lucovsky, G. ; Henson, W. K. ; Wortman, J. J. ; Kippenberg, T. ; Kuerschner, S.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.157-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
67.

Conference Proceedings
Conference Proceedings
67. Chemical Bonding of Fluorine Atoms in SiOF Alloys: Microscopic Mechanisms for Reductions in the Dielectric Constant Relative to SiO2
Lucovsky, G. ; Yang, H.
Pub. info.: Low-dielectric constant materials II : symposium held December 2-3, 1996, Boston, Massachusetts, U.S.A..  pp.111-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 443
68.

Conference Proceedings
Conference Proceedings
68. Optical Characterization of Silicon Oxycarbide Thin Films
Wolfe, D. M. ; Wang, F. ; Hinds, B. J. ; Lucovsky, G.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.203-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
69.

Conference Proceedings
Conference Proceedings
69. Chemical Stability of Advanced Metal Gate and Ultra-Thin Gate Dielectric Interface During Rapid Thermal Annealing
Claflin, B. ; Binger, M. ; Lucovsky, G.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.219-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
70.

Conference Proceedings
Conference Proceedings
70. The Effects of Interfacial Suboxide Transition Regions On Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics
Yang, H. ; Niimi, H. ; Wu, Y. ; Lucovsky, G.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.241-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
71.

Conference Proceedings
Conference Proceedings
71. Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics
Lucovsky, G. ; Phillips, J. C.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.201-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
72.

Conference Proceedings
Conference Proceedings
72. Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-Thin Gate Dielectrics
Claflin, B. ; Binger, M. ; Lucovsky, G. ; Yang, H.-Y.
Pub. info.: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.171-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 532
73.

Conference Proceedings
Conference Proceedings
73. Production of Silicon Nanocrystals by Thermal Annealing of Silicon-Oxygen and Silicon-Oxygen-Carbon Alloys: Model Systems for Chemical and Structural Relaxation at Si-SiO2 and SiC-SiO2 Interfaces
Lucovsky, G. ; Wolfe, D. ; Hinds, B.
Pub. info.: Microcrystalline and nanocrystalline semiconductors--1998 : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.111-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 536
74.

Conference Proceedings
Conference Proceedings
74. Integrated Two-Stage Processing of Microcrystalline Silicon Thin Films on SiO2 and Glass
Wolfe, D. ; Wang, F. ; Lucovsky, G.
Pub. info.: Rapid thermal and integrated processing V : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.361-,  1996.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 429
75.

Conference Proceedings
Conference Proceedings
75. A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111)
Yasuda, T. ; Lee, D. R. ; Bjorkman, C. H. ; Ma, Y. ; Lucovsky, G. ; Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H.
Pub. info.: Surface chemical cleaning and passivation for semiconductor processing.  pp.375-,  1993.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 315
76.

Conference Proceedings
Conference Proceedings
76. BACK-CHANNEL SURFACE MODIFICATIONS FOR a-Si:H THIN FILM TRANSISTORS, TFTs, BY EXPOSURE TO PLASMA EXCITED N2O
He, S. S. ; Stephens, D. J. ; Lucovsky, G.
Pub. info.: Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.489-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 318
77.

Conference Proceedings
Conference Proceedings
77. A Study of Silicon Suboxide Thin Films by Photoluminescence
Wang, F. ; Wolfe, D. M. ; Hinds, B. J. ; Lucovsky, G. ; Platz, R. ; Wagner, S.
Pub. info.: Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14-17, 1998, San Francisco, California, U.S.A..  pp.267-,  1999.  Warrendale.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 507
78.

Conference Proceedings
Conference Proceedings
78. Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect Devices
Therrien, R. J. ; Nam, O. H. ; Bremser, M. D. ; Lithicum, K. ; Nimii, H. ; Carlson, E. P. ; Lucovsky, G. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1107-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
79.

Conference Proceedings
Conference Proceedings
79. Substrate Surface Dependence of the Microstructure of ｦﾌc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS)
Cho, S. M. ; Christensen, K. ; Wolfe, D. ; Ying, H. ; Lee, D. R. ; Lucovsky, G. ; Maher, D. M.
Pub. info.: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.241-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 405
80.

Conference Proceedings
Conference Proceedings
80. Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability
Lucovsky, G. ; Lee, D. R. ; Jing, Z. ; Whitten, J. L. ; Parker, C. ; Hauser, J. R.
Pub. info.: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.321-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 405
81.

Conference Proceedings
Conference Proceedings
81. Stability of Silicon-Oxygen-Fluorine and Carbon-Fluorine Low-K Dielectrics with Respect to Attack by Water
Yang, H. ; Lucovsky, G.
Pub. info.: Low-dielectric constant materials IV : symposium held April 14-16, 1998, San Francisco, California, U.S.A..  pp.371-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 511
82.

Conference Proceedings
Conference Proceedings
82. Interfacial Properties of Si-Si3N4 Formed by Remote Plasma Enhanced Chemical Vapor Deposition
Misra, V. ; Lazar, H. ; Kulkarni, M. ; Wang, Z. ; Lucovsky, G. ; Hauser, J. R.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.89-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
83.

Conference Proceedings
Conference Proceedings
83. Photoluminescence Stability of Silicon Suboxide Thin Films
Wang, F. ; Hinds, B. J. ; Wolfe, D. W. ; Lucovsky, G.
Pub. info.: Materials and devices for silicon-based optoelectronics : symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A..  pp.349-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 486
84.

Conference Proceedings
Conference Proceedings
84. Aggressively Scaled P-Channel MOSFETs With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics
Wu, Y. ; Lucovsky, G.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.101-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
85.

Conference Proceedings
Conference Proceedings
85. High-K Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials
Claflin, B. ; Flock, K. ; Lucovsky, G.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.603-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
86.

Conference Proceedings
Conference Proceedings
86. Microscopic Mechanisms for Reduced Static Dielectric Constants in Si-O-F Alloy Films
Yang, H. ; Lucovsky, G.
Pub. info.: Low-dielectric constant materials III : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.273-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 476
87.

Conference Proceedings
Conference Proceedings
87. Nitrided Silicon Oxide Gate Dielectrics for Submicron Device Technology
Lucovsky, G.
Pub. info.: Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A..  pp.67-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 446
88.

Conference Proceedings
Conference Proceedings
88. ANNEALING OF IRREVERSIBLE DEFECTS IN HYDROGENATED AND UNHYDROGENATED AMORPHOUS SILISON THIN FILMS
Parsons, G. N. ; Wang, C. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A..  pp.775-780,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 192
89.

Conference Proceedings
Conference Proceedings
89. INTRINSIC GROWTH STRESS IN THERMALLY GROWN AND ANNEALED SiO2 THIN FILMS: CONTROL OF STRESS-INDUCED ELECTRONICALLY ACTIVE DEFECTS AT Si/SiO2 INTERFACES
Bjorkman, C.H. ; Lee, D.R. ; Lucovsky, G.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.271-276,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
90.

Conference Proceedings
Conference Proceedings
90. EFFECT OF THE LOCAL DISORDER IN a-Si ON THE ELECTRONIC DENSITY OF STATES AT THE BAND EDGES
Davidson, B.N. ; Lucovsky, G. ; Bernholc, J.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.581-586,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
91.

Conference Proceedings
Conference Proceedings
91. Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA)
Lucovsky, G. ; Lu, Z. ; Lee, D.R.
Pub. info.: AIchE 1994 Annual Meeting : November 13-18 San Francisco Hilton and Towers Hotel, San Francisco, California.  1994.  New York.  American Institute of Chemical Engineers
Title of ser.: AIChE meeting [papers]
Ser. no.: 1994
92.

Conference Proceedings
Conference Proceedings
92. Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition
Habermehl, S. ; Lucovsky, G.
Pub. info.: AIchE 1994 Annual Meeting : November 13-18 San Francisco Hilton and Towers Hotel, San Francisco, California.  1994.  New York.  American Institute of Chemical Engineers
Title of ser.: AIChE meeting [papers]
Ser. no.: 1994
93.

Conference Proceedings
Conference Proceedings
93. DEPOSITION OF MICROCRYSTALLINE Si,Ge (ｦﾌc-Si,Ge) ALLOYS BY REACTIVE MAGNETRON SPUTTERING
Cho, S. M. ; Wolfe, D. ; He, S. S. ; Christensen, K. ; Maher, D. M. ; Lucovsky, G.
Pub. info.: Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A..  pp.781-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 358
94.

Conference Proceedings
Conference Proceedings
94. CHEMICAL MODIFICATION OF SURFACE STEPS ON Si(111) VICINAL WAFERS: A BONDING MODEL FOR PHASE CHANGES IN SECOND HARMONIC GENERATION
Jing, Z. ; Lucovsky, G. ; Whitten, J. L.
Pub. info.: Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.287-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 318
95.

Conference Proceedings
Conference Proceedings
95. Preparation and Characterization of Silicon Nanocrystals in a SiO2 Matrix and Study of Suboxide Stability
Hinds, B. J. ; Banerjee, A. ; Johnson, R. S. ; Lucovsky, G.
Pub. info.: Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.207-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 452
96.

Conference Proceedings
Conference Proceedings
96. Hydrogen Release and Si-N Bond-Healing Infrared Study of Rapid Thermal Annealed Amorphous Silicon Nitride Thin Films
Santos-Filho, P. ; Stevens, G. ; Lu, Z. ; Koh, K. ; Lucovsky, G.
Pub. info.: Thermodynamics and kinetics of phase transformations : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.345-,  1996.  Pittsburgh, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 398
97.

Conference Proceedings
Conference Proceedings
97. GROWTH AND CHARACTERIZATION OF Si-GaP AND Si-GaP-Si HETEROSTRUCTURES
Dietz, N. ; Habermehl, S. ; Kelliher, J. T. ; Lucovsky, G. ; Bachmann, K. J.
Pub. info.: Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.495-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 334
98.

Conference Proceedings
Conference Proceedings
98. SILICON OXYNITRIDE AND OXIDE-NITRIDE-OXIDE GATE DIELECTRICS BY CONBINED PLASMA-RAPID THERMAL PROCESSING
Ma, Y. ; Hattangady, S. V. ; Yasuda, T. ; Niimi, H. ; Gandhi, S. ; Lucovsky, G.
Pub. info.: Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.169-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 342
99.

Conference Proceedings
Conference Proceedings
99. Electric and Optical Properties of ｦﾌc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS)
Cho, S. M. ; Wolfe, D. ; Christensen, K. ; Lucovsky, G. ; Maher, D. M.
Pub. info.: Polycrystalline thin films II : structure, properties, and applications : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.471-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 403
100.

Conference Proceedings
Conference Proceedings
100. A dual-function UHV-Compatible chamber for (i) low-temperature plasma-assisted oxidation, and (ii) high-temperature rapid thermal processing of Si-based dielelctric gate heterostructures
Hattangady, S. ; Xu, X-L ; Watkins, M. J. ; Hornung, B. ; Misra, V. ; Lucovsky, G. ; Wortman, J. J.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.581-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300