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24 results

Conference Proceedings

1. Ab Inittio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface

Yamaguchi, H. ; Sakiyama, Y. ; Makino, E. ; Onda, S. ; Matsumoto, Y.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.235-238, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Ground calibration of CCD camera (XIS) with front-illuminated chips onboard Astro-E2

Nakajima, H. ; Yamaguchi, H. ; Matsumoto, H. ; Tsuru, T. ; Koyama, K. ; Kissel, S. ; LaMarr, B. ; Bautz, M. W.

Pub. info.:	UV and gamma-ray space telescope systems : 21-24 June 2004, Glasgow, Scotland, United Kingdom. pp.124-135, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5488

Conference Proceedings

3. Process Strategy for Built-in Reliability of Cu Damascene Interconnect System for 0.13μm-Node and Beyond *

Yamaguchi, H. ; Oshima, T. ; Noguchi, J. ; Ishikawa, K. ; Aoki, H. ; Saito, T. ; Furusawa, T. ; Hinode, K.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.434-446, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-6

Conference Proceedings

4. Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid

Bahng, W. ; Kitou, Y. ; Nishizawa, S. ; Yamaguchi, H. ; Khan, M. N. ; Oyanagi, N. ; Arai, K. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.103-106, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

5. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.447-450, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. 18-P-15 - Simulation for removal of binary solvent vapor by adsorption onto high silica zeolite.

Chihara, K. ; Saito, T. ; Suzuki, H. ; Yamaguchi, H. ; Takeuchi, Y.

Pub. info.:	Zeolites and mesoporous materials at the dawn of the 21st century : proceedings of the 13th International Zeolite Conference, Montpellier, France, 8-13 July 2001. pp.229-229, 2001. Amsterdam. Elsevier
Title of ser.:	Studies in surface science and catalysis
Ser. no.:	135

Conference Proceedings

7. Adsorption Removal of the Mixed Organic Solvent Stream by High Silica Zeolite

Chihara, K. ; Hijikata, K. ; Yamaguchi, H. ; Suzuki, H. ; Saito, T. ; Takeuchi, Y.

Pub. info.:	Recent advances in the science and technology of zeolites and related materials : proceedings of the 14th International Zeolite Conference, Cape Town, South Africa, 25-30th April 2004. pp.2012-2019, 2004. Amsterdam. Elsevier
Title of ser.:	Studies in surface science and catalysis
Ser. no.:	154

Conference Proceedings

8. SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique

Oyanagi, N. ; Nishizawa, S. ; Kato, T. ; Yamaguchi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.75-78, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

Kato, T. ; Oyanagi, N. ; Yamaguchi, H. ; Takano, Y. ; Nishizawa, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.457-460, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

10.

Conference Proceedings

10. X-Ray Topographic Study of SiC Crystal at High Temperature

Yamaguchi, H. ; Oyanagi, Na. ; Kato, T. ; Takano, Y. ; Nishizawa, S. ; Bahng, W. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.461-464, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

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