1.

Conference Proceedings
Conference Proceedings
1. ENERGY AND DEPTH DISTRIBUTIONS OF INTERFACE STATES AND BULK TRAPS AND THEIR ELECTRONIC EFFECTS IN GaInAs/GaAs HETEROJUNCTIONS
Huang, Z. C. ; Wie, C. R. ; Johnstone, D. ; Stutz, C. E.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.633-642,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. SIMULATION DESIGN AND DEVICE CHARACTERISTICS OF AlAs/GaAs/AlAs RESONANT TUNNELING STRUCTURES WITH A GaInAs EMITTER SPACER LAYER
Choi, Y. W. ; Kim, H. M. ; Wie, C. R.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.627-632,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. INTERFACE RECOMBINATION AND THRESHOLD CURRENT IN GRINSCH-QW AlGaAs/GaAs LASER DIODES
Xie, K. ; Kim, H. M. ; Wie, C. R. ; Varriano, J. A. ; Wicks, G. W.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.591-596,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
4.

Conference Proceedings
Conference Proceedings
4. CHARACTERIZATION OF MBE GaAs LAYERS GROWN AT 200°C-300°C
Wie, C. R. ; Xie, K. ; Berdin, T. T. ; Fronko, J. G. ; Look, D. C. ; Evans, K. R. ; Stutz, C. E.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.383-388,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
5.

Conference Proceedings
Conference Proceedings
5. IMPROVEMENT OF InP-GaAs-Si QUALITY BY THERMAL-CYCLE GROWTH
Vernon, S. M. ; Keavney, C. J. ; Gagnon, E. D. ; Karam,. N. H. ; Al-Jassim. M. M. ; Haegel, N. M. ; Mazzi, V. P. ; Wie, C. R.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.163-170,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
6.

Conference Proceedings
Conference Proceedings
6. PHOSPHORUS-VACANCY-RELATED DEEP LEVELS IN GaInP LAYERS GROWN BY MOLECULAR BEAM EPITAXY
Huang, Z. C. ; Wie, C. R. ; Varriano, J. A. ; Koch, M. W. ; Wicks, G. W.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.137-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
7.

Conference Proceedings
Conference Proceedings
7. CONTACT-RELATED DEEP STAGES IN Al-GaInP/GaAs INTERFACE
Huang, Z. C. ; Wie, C. R.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.209-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325