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13 results

Conference Proceedings

1. PROPERTIES OF GaInAsP ALLOYS INVESTIGATED BY OPTICALLY DETECTED MAGNETIC RESONANCE TECHNIQUES

Wetzel, C. ; Meyer, B.K. ; Grutzmacher, D. ; Omling, P.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.353-358, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

2. Electron-Phonon Scattering in Si-Doped GaN

Wetzel, C. ; Walukiewicz, W. ; Ager, J. W., III

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.567-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

3. Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

Wetzel, C. ; Takeuchi, T. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.66.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

4. Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

Amano, H. ; Iwaya, M. ; Hayashi N. ; Kashima, T. ; Katsuragawa, M. ; Takeuchi, T. ; Wetzel, C. ; Akasaki, I.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G10.1.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

5. X-ray Photoelectron Diffraction Measurements of Hexagonal GaN(0001) Thin Films

Denecke, R. ; Morais, J. ; Wetzel, C. ; Liesegang, J. ; Haller, E. E. ; Fadley, C. S.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.263-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

6. Localized Donors in GaN: Spectroscopy Using Large Pressures

Wetzel, C. ; Amano, H. ; Akasaki, I. ; Suski, T. ; Ager, J. W. ; Weber, E. R. ; Haller, E. E. ; Meyer, B. K.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.489-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

7. Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate

Amano, H. ; Takekuchi, T. ; Yamaguchi, S. ; Nitta, S. ; Kariya, M. ; Iwaya, M. ; Wetzel, C. ; Akasaki, I.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.479-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

8. Identification of Transition Metals in GaN

Pressel, K. ; Heitz, R. ; Eckey, L. ; Loa, I. ; Thurian, P. ; Hoffmann, A. ; Meyer, B. K. ; Fischer, S. ; Wetzel, C. ; Haller, E. E.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.491-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

9. Fine Structure of the 3.42 eV Emission Band in GaN

Fischer, S. ; Wetzel, C. ; Walukiewicz, W. ; Haller, E. E.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.571-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

10.

Conference Proceedings

10. Defect Studies of GaN Under Large Hydrostatic Pressure

Wetzel, C. ; Fischer, S. ; Walukiewicz, W. ; Ager, J., III ; Haller, E. E. ; Grzegory, I. ; Porowski, S. ; Suski, T.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.417-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

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