1.

Conference Proceedings
Conference Proceedings
1. An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
J.D. Seo ; J.H. An ; J.G. Kim ; J.K. Kim ; M.O. Kyun ; W.J. Lee ; I.S. Kim ; B.C. Shin ; K.R. Ku
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.9-12,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
J.G. Kim ; J.H. An ; J.D. Seo ; J.K. Kim ; M.O. Kyun ; W.J. Lee ; I.S. Kim ; B.C. Shin ; K.R. Ku
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.25-28,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
H.H. Hwang ; J.K. Kim ; J.M. Choi ; W.J. Lee ; I.S. Kim
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.935-938,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617