1.

Conference Proceedings
Conference Proceedings
1. Well Thickness and Doping Effects, and Room-Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple-Quantum-Wells
Zeng, K. C. ; Smith, M. ; Lin, J. Y. ; Jiang, H. X. ; Tang, H. ; Salvador, A. ; Kim, W. ; Morkoc, H. ; Khan, M. Asif
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.643-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Photoluminescence Properties of GaN/AlGaN Multiple-Quantum-Well Microdisks
Mair, R. A. ; Zeng, K. C. ; Lin, J. Y. ; Jiang, H. X. ; Zhang, B. ; Dai, L. ; Tang, H. ; Botchkarev, A. ; Kim, W. ; Morkoc, H.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.649-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Technical Paper
Technical Paper
3. A statistical model on drive-level stiction
Tang, H. ; Gui, J.
Pub. info.: A.S.M.E. paper.  1998.  New York.  The American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : TRIB
Ser. no.: 1998