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32 results

Conference Proceedings

1. Phase-shifting joint transform correlator with a wavelength-shifted laser diode (Invited Paper)

Takahashi, T. ; Ishii, Y.

Pub. info.:	Optical information processing technology : 16-18 October 2002, Shanghai, China. pp.254-266, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4929

Conference Proceedings

2. Temperature measurement of ceramics in furnaces by 3-color thermograph

Takahashi, T. ; Hashimoto, M. ; Yano, K. ; Tamura, T. ; Iwata, M. ; Kitagawa, K. ; Arai, N.

Pub. info.:	Thermosense XXIV : 1-4 April 2002, Orlando, [Florida] USA. pp.72-79, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4710

Conference Proceedings

3. Sensitive Detection of Defects in α and β SiC by Raman Scattering

Nakashima, S. ; Nakatake, Y. ; Ishida, Y. ; Takahashi, T. ; Okumura, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.629-632, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.447-450, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1053-1056, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1013-1016, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Global wavefront reconstruction algorithm from its image in the focal plane and Shack- Hartmann sensor images

Takahashi, T. ; Takajo, H. ; Maeyama, T. ; Fujisaki, T.

Pub. info.:	Adaptive optics and and applications II : 15-16 October 2002 Shanghai, China. pp.235-242, 2002. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4926

Conference Proceedings

8. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.195-198, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.227-230, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.215-218, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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