1.

Conference Proceedings
Conference Proceedings
1. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Kushibe, M. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Masahara, K. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.169-172,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
2.

Conference Proceedings
Conference Proceedings
2. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
Masahara, K. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1037-1040,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1235-1238,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.253-256,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)