1.

Conference Proceedings
Conference Proceedings
1. Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs
A. Takatsuka ; Y. Tanaka ; K. Yano ; T. Yatsuo ; K. Arai
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.962-965,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. 980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors
A. Takatsuka ; Y. Tanaka ; K. Yano ; T. Yatsuo ; K. Arai
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.662-665,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Fabrication of P-Channel MOSFETs on 4H-SiC C-Face
M. Okamoto ; M. Iijima ; T. Yatsuo ; T. Nagano ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.653-656,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance
M. Yamamoto ; Y. Tanaka ; T. Yatsuo ; K. Yano
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.1095-1098,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
M. Okamoto ; M. Iijima ; T. Yatsuo ; K. Fukuda ; H. Okumura
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.995-998,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
6.

Conference Proceedings
Conference Proceedings
6. Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
A. Takatsuka ; Y. Tanaka ; K. Yano ; T. Yatsuo ; K. Arai
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.535-538,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. Radiation Hardness Evaluation of SiC-BGSIT
Y. Tanaka ; S. Onoda ; A. Takatsuka ; T. Ohshima ; T. Yatsuo
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.941-944,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
8.

Conference Proceedings
Conference Proceedings
8. Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
A. Kinoshita ; T. Ohyanagi ; T. Yatsuo ; K. Fukuda ; H. Okumura
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.893-896,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
A. Takatsuka ; Y. Tanaka ; K. Yano ; N. Matsumoto ; T. Yatsuo
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.899-902,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780