Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

15 results

Conference Proceedings

1. Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

K. Seki ; S. Harada ; T. Ujihara

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.311-314, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method

S. Kozawa ; K. Seki ; Y. Yamamoto ; T. Ujihara ; Y. Takeda

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.28-31, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

3. Polytype Stability of 4H-SiC Seed Crystal on Solution Growth

K. Seki ; S. Kozawa ; Y. Yamamoto ; T. Ujihara ; Y. Takeda

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.24-27, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

4. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth

T. Ujihara ; S. Kozawa ; K. Seki ; Y. Yamamoto ; S. Harada

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.351-354, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

5. Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth

Y. Yamamoto ; K. Seki ; S. Kozawa ; S. Harada ; T. Ujihara

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.53-56, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

6. Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent

S. Harada ; Y. Yamamoto ; S.Y. Xiao ; M. Tagawa ; T. Ujihara

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.67-70, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

7. Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC

T. Umezaki ; D. Koike ; A. Horio ; S. Harada ; T. Ujihara

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.63-66, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds

T. Umezaki ; D. Koike ; S. Harada ; T. Ujihara

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.31-34, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

9. 4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

T. Mitani ; N. Komatsu ; T. Takahashi ; T. Kato ; T. Ujihara

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.9-13, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

10.

Conference Proceedings

10. 3C-SiC Crystal on Sapphire by Solution Growth Method

K. Shibata ; S. Harada ; T. Ujihara

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.185-188, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

15 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by: