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10 results

Conference Proceedings

1. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

T. Suzuki ; J. Senzaki ; T. Hatakeyama ; K. Fukuda ; T. Shinohe

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.791-794, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

2. Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

T. Hatakeyama ; T. Suzuki ; J. Senzaki ; K. Fukuda ; H. Matsuhata

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.783-786, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

3. Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)

C. Ota ; J. Nishio ; K. Takao ; T. Hatakeyama ; T. Shinohe

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.655-658, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

4. Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation

T. Suzuki ; J. Senzaki ; T. Hatakeyama ; K. Fukuda ; T. Shinohe

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.557-560, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

5. Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.477-480, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

6. Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

T. Hatakeyama ; H. Kono ; T. Suzuki ; J. Senzaki ; K. Fukuda

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.553-556, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

7. Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

T. Hatakeyama ; K. Ichinoseki ; N. Higuchi ; K. Fukuda ; K. Arai

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.553-556, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

M. Nagano ; H. Tsuchida ; T. Suzuki ; T. Hatakeyama ; J. Senzaki

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.611-614, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

9. Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

C. Ota ; J. Nishio ; T. Hatakeyama ; T. Shinohe ; K. Kojima ; S.I. Nishizawa ; H. Ohashi

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.881-884, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

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Technical Paper

10. Temperature and Time Dependence of Device Interactions in Submicron Si CMOS

T. Hatakeyama ; K. Fushinobu ; K. Okazaki

Pub. info.:	AIAA meeting papers on disc. 2006. Reston, Va. American Institute of Aeronautics and Astronautics
Title of ser.:	AIAA Paper : AIAA/ASME Joint Thermophysics and Heat Transfer Conference
Ser. no.:	2006

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