1.

Conference Proceedings
Conference Proceedings
1. FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY
Karoui, A. ; Karoui, F.S. ; Rozgonyi, G.A. ; Hourai, M. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.670-681,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON
Sueoka, K. ; Akatsuka, M. ; Okui, M. ; Katahama, H.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.540-553,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON
Akatsuka, M. ; Okui, M. ; Umeno, S. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.517-527,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
4.

Conference Proceedings
Conference Proceedings
4. FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY
Karoui, A. ; Karoui, F.S. ; Rozgonyi, G.A. ; Hourai, M. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.670-681,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
5.

Conference Proceedings
Conference Proceedings
5. COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON
Sueoka, K. ; Akatsuka, M. ; Okui, M. ; Katahama, H.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.540-553,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
6.

Conference Proceedings
Conference Proceedings
6. CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON
Akatsuka, M. ; Okui, M. ; Umeno, S. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.517-527,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2