1.

Conference Proceedings
Conference Proceedings
1. Room Temperature Covalent Bonding: Effect on Interfacial Properties
Ploessl, A ; Scholz, R. ; Akatsu, T.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.232-243,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
2.

Conference Proceedings
Conference Proceedings
2. Bonding of Hydrogen-Terminated Silicon: Thermal Evolution of the Interfacial Properties
Ploessl, A. ; Scholz, R. ; Schulze, H.-J. ; Hopfe, S.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.224-231,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
3.

Conference Proceedings
Conference Proceedings
3. Light Ion Irradiation Creep of SCS-6 Silicon Carbide Fibers in the Temperature Range 450-1100｡?C
Scholz, R. ; Pasic, H.
Pub. info.: Microstructural processes in irradiated materials : symposium held November 30-December 2, 1998, Boston, Massachusetts, U.S.A..  pp.279-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 540
4.

Conference Proceedings
Conference Proceedings
4. Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
Kopperschmidt, P. ; Senz, St. ; Scholz, R. ; Kastner, G. ; Gosele, U. ; Velling, P. ; Prost, W. ; Tegude, F-J. ; Gottschalch, V. ; Wada, K.
Pub. info.: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.45-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 535