1.

Conference Proceedings
Conference Proceedings
1. THE INTERFACE OF SILICON SAMPLES JOINED AT ROOM TEMPERATURE BY WAFER DIRECT BONDING IN ULTRAHIGH VACUUM
Ploessl, A. ; Scholz, R. ; Bagdahn, J. ; Stenzel, H. ; Tu, K.N. ; Goesele, U.M.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1361-1372,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
2.

Conference Proceedings
Conference Proceedings
2. Superlattice Calculation in an Empirical spds Tight-Binding Model
Scholz, R. ; Jancu, J-M. ; Bassani, F.
Pub. info.: Tight-binding approach to computational materials science : symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A..  pp.383-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 491
3.

Conference Proceedings
Conference Proceedings
3. Fermi-Level Effect, Electric-Field Effect, and Diffusion Mechanisms in GaAs-Based III-V Compound Semiconductors
Tan, T. Y. ; Chen, C-H. ; Gosele, U. ; Scholz, R.
Pub. info.: Diffusion mechanisms in crystalline materials : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.321-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 527